CGY 121 A

Siemens Aktiengesellschaft

3

23.06.98

HL HF PE GaAs1

Electrical characteristics

(

TA = 25°C, f = 900 MHz, Vg = -4V, RS = RL = 50 Ω unless otherwise specified)

Characteristics

Symbol

min

typ

max

Unit

Power Gain

Vd=3V; I=45mA; Vcon=3V

G

17

19

-

dB

Input return loss

Vd=3V; I=45mA; Vcon=3V

RLin

-11

-

dB

Output return loss

Vd=3V; I=45mA; Vcon=3V

RLout

-10

-

dB

Gain Control Range

Vcon=3 V ... 0V; Vd=3V; I=45mA

dG

48

53

-

dB

1dB gain compression

Vd=3V; I=45mA; Vcon=3V

P1dB

-14

-

dBm

Electrical characteristics

(

TA = 25°C ,f = 1800 MHz, Vg=-4V, RS = RL = 50 Ω unless otherwise specified)

Characteristics

Symbol

min

typ

max

Unit

Power Gain

Vd=3V; I=45mA; Vcon=3V

G

15.5

17.5

-

dB

Input return loss

Vd=3V; I=45mA; Vcon=3V

RLin

-10

-

dB

Output return loss

Vd=3V; I=45mA; Vcon=3V

RLout

-8.5

-

dB

Gain Control Range

Vcon=3 V ... 0V; Vd=3V; I=45mA

dG

48

53

-

dB

1dB gain compression

Vd=3V; I=45mA; Vcon=3V

P1dB

-14

-

dBm

DC characteristics

Characteristics

Symbol

min

typ

max

Unit

Gate current (Pin 4)

Vg=-4V

Ig

-

1.0

-

mA

Control current (Pin 6)

Vg=-4V; Vcon=0V...3V

Ic

-

0.5

-

mA

Supply current

Vg = -4V; Vcon = 3V

Id

-

45

-

mA

Semiconductor Group

3

1998-11-01

Semiconductor Group

3

1998-11-01