поискавой системы для электроныых деталей |
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2SC3355-T датащи(PDF) 3 Page - Renesas Technology Corp |
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2SC3355-T датащи(HTML) 3 Page - Renesas Technology Corp |
3 / 10 page DATA SHEET Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION Document No. PU10208EJ01V0DS (1st edition) (Previous No. P10355EJ3V1DS00) Date Published April 2003 CP(K) Printed in Japan The mark • • • • shows major revised points. © © © © NEC Compound Semiconductor Devices 1985, 2003 DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic. FEATURES • Low noise and high gain NF = 1.1 dB TYP., Ga = 8.0 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz NF = 1.8 dB TYP., Ga = 9.0 dB TYP. @ VCE = 10 V, IC = 40 mA, f = 1 GHz • High power gain : MAG = 11 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz ORDERING INFORMATION Part Number Quantity Supplying Form 2SC3355 500 pcs (Non reel) • 18 mm wide radial taping 2SC3355-T 2.5 kpcs/box (Box type) • Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 500 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25 °°°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3.0 V Collector Current IC 100 mA Total Power Dissipation Ptot 600 mW Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C |
Аналогичный номер детали - 2SC3355-T |
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Аналогичное описание - 2SC3355-T |
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