2N40

Preliminary

Power MOSFET

UNISONICTECHNOLOGIESCO.,LTD

2 of 5

www.unisonic.com.tw

QW-R502-524.b

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

400

V

Gate-Source Voltage

±30

V

Continuous

2

A

Drain Current

Pulsed

7

A

Avalanche Current

2.5

A

Single Pulsed Avalanche Energy

100

mJ

Power Dissipation

25

W

Linear Derating Factor

P

0.2

W/°C

Junction Temperature

150

°C

Storage Temperature

-55 ~ 150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

THERMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Junction to Ambient

62.5

°C/W

Junction to Case

5

°C/W

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

400

V

Breakdown Voltage Temperature

Coefficient

BV

△

0.45

V/°C

Drain-Source Leakage Current

1

25

µA

Forward

+10 +200 nA

Gate- Source Leakage Current

Reverse

-10 -200 nA

ON CHARACTERISTICS

Gate Threshold Voltage

2.0

4.0

V

Static Drain-Source On-State Resistance

3.0

3.4

Ω

DYNAMIC PARAMETERS

Input Capacitance

240

pF

Output Capacitance

44

pF

Reverse Transfer Capacitance

26

pF

SWITCHING PARAMETERS

Total Gate Charge

20

25

nC

Gate to Source Charge

2

3

nC

Gate to Drain Charge

8

12

nC

Turn-ON Delay Time

10

ns

Rise Time

25

ns

Turn-OFF Delay Time

46

ns

Fall-Time

25

ns

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

2.5

A

Maximum Body-Diode Pulsed Current

10

A

Drain-Source Diode Forward Voltage

1.2

V

Body Diode Reverse Recovery Time

200

ns

Body Diode Reverse Recovery Charge

2.0

µC