Super Low VF Low IR SMD Schottky Barrier Rectifiers

Reverse Voltage: 20 to 60 Volts

Forward Current: 1.0 Amp

RoHS Device

Page 1

REV: B

CDBB120SLR-HF Thru. CDBB160SLR-HF

Dimensions in inches and (millimeter)

QW-JL013

CDBB120SLR-HF

Comchip Technology CO., LTD.

Max. Repetitive peak reverse voltage

Max. DC blocking voltage

Max. RMS voltage

Forward surge current

Reverse Current

Storage temperature

CDBB140SLR-HF

CDBB160SLR-HF

Units

Symbol

Parameter

20

20

14

40

40

28

60

60

42

V

V

V

A

A

mA

DO-214AA (SMB)

Max. instantaneous forward voltage @

0.35

0.40

0.50

V

Operating Temperature

-50 to +150

°C

Parameter

Conditions

on rate load (JEDEC method)

8.3ms single half sine-wave superimposed

Forward rectified current

see Fig.1

Thermal Resistance

Diode Junction capacitance

Junction to ambient

Symbol

MIN.

TYP.

MAX.

mA

°C/W

pF

°C

1.0

30

0.5

20

88

120

-50

+150

Units

0.098 (2.50)

0.083 (2.10)

0.087 (2.20)

0.075 (1.90)

0.157 (4.00)

0.130 (3.30)

0.189 (4.80)

0.157 (4.00)

0.012 (0.31)

MAX.

0.220 (5.60)

0.197 (5.00)

0.063 (1.60)

0.028 (0.70)

0.008(0.21)

MAX.

Maximum Ratings and Electrical Characteristics

Ratings at Ta=25°C unless otherwise noted.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derate current by 20% .

Features

-Ultra high-speed switching.

Mechanical data

-Case: Molded plastic, DO-214AA / SMB

-Terminals: solderable per MIL-STD-750,

method 2026.

-Polarity: Indicated by cathode band.

-Weight: 0.091 grams

-Low Profile surface mount applications

in order to optimize board space.

-Low power loss, high efficiency.

-Hight current capability, low forward voltage drop.

-Hight surge capability.

-Guardring for overvoltage protection.

-Epoxy: UL94-V0 rate flame retardant.

-Silicon epitaxial planar chip, metal silicon junction.

Halogen Free