Leaded Schottky Barrier Rectifiers

QW-BB024

Page 1

REV:B

Ratings at 25°C ambient temperature unless otherwise specified.

Voltage: 20 to 100 V

Current: 3.0 A

RoHS Device

SB320-G Thru. SB3100-G

Dimensions in inches and (millimeter)

DO-201AD

Comchip Technology CO., LTD.

1.0(25.4) Min.

1.0(25.4) Min.

0.375(9.5)

0.287(7.3)

0.210(5.3)

0.189(4.8)

0.052(1.30)

0.048(1.20)

Features

Mechanical data

-Metal-Semiconductor junction with guard ring

-For use in low voltage, high efficiency inverters,

free wheeling, and polarity protection applications

Parameter

Symbol

Unit

Maximum recurrent peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375” (9.5mm) lead length at TA=100°C, See Figure 1

Peak forward surge current

8.3ms single half sine-wave superimposed on rated load

Maximum f

3.0A

orward voltage at

Maximum DC reverse current

At rated DC blocking voltage

Typical junction capacitance (Note 1)

Operating junction temperature range

-55 to +150

V

V

V

A

A

V

pF

°C/W

mA

NOTES:

1.

.

Measured at 1.0MHz and applied reverse voltage of 4.0 Volts

Storage temperature range

2. Thermal resistance junction to ambient and junction to lead.

°C

°C

Typical t

(Note 2)

hermal resistance

20

20

40

40

45

45

50

50

60

60

80

80

100

100

14

28

30

35

42

56

70

3.0

-55 to +150

-55 to +125

10

20

40.0

20.0

0.5

0.50

0.85

0.70

250

80

SB

320-G

SB

340-G

SB

345-G

SB

350-G

SB

360-G

SB

3100-G

SB

380-G

Comchip

S M D D i o d e S p e c i a l i s t

90