поискавой системы для электроныых деталей |
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DAC6311IDCKTG4 датащи(PDF) 2 Page - Texas Instruments |
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DAC6311IDCKTG4 датащи(HTML) 2 Page - Texas Instruments |
2 / 43 page DAC5311 DAC6311 DAC7311 SBAS442A – AUGUST 2008 – REVISED AUGUST 2011 www.ti.com This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage. ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications. PACKAGE/ORDERING INFORMATION(1) MAXIMUM MAXIMUM RELATIVE DIFFERENTIAL SPECIFIED ACCURACY NONLINEARITY PACKAGE- PACKAGE TEMPERATURE PACKAGE PRODUCT (LSB) (LSB) LEAD DESIGNATOR RANGE MARKING DAC5311 ±0.25 ±0.25 SC70-6 DCK –40°C to 125°C D53 DAC6311 ±0.5 ±0.5 SC70-6 DCK –40°C to 125°C D63 DAC7311 ±1 ±1 SC70-6 DCK –40°C to 125°C D73 (1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the device product folder at www.ti.com. ABSOLUTE MAXIMUM RATINGS (1) PARAMETER VALUE UNIT AVDD to GND –0.3 to +6 V Digital input voltage to GND –0.3 to +AVDD +0.3 V AVOUT to GND –0.3 to +AVDD +0.3 V Operating temperature range –40 to +125 °C Storage temperature range –65 to +150 °C Junction temperature (TJ max) +150 °C Power dissipation (TJ max – TA)/θJA W θJA thermal impedance 250 °C/W (1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may affect device reliability. 2 Copyright © 2008–2011, Texas Instruments Incorporated |
Аналогичный номер детали - DAC6311IDCKTG4 |
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Аналогичное описание - DAC6311IDCKTG4 |
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