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CDCE431YS датащи(PDF) 10 Page - Texas Instruments |
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CDCE431YS датащи(HTML) 10 Page - Texas Instruments |
10 / 27 page Enter Programming Mode 0 0 0 0 1 1 t 7 t 1 t 6 t 5 t 2 t F t R t 3 t 4 CE SDATA DATA SDATA DELAYED EEPROM Programming CDCE421A SCAS873 – APRIL 2009..................................................................................................................................................................................................... www.ti.com Figure 2 shows the timing behavior of data to be written into SDATA. The sequence shown is '001100'. If the high period is as short as t1, this period is interpreted as '0'. If the high period is as long as t3, this period is interpreted as a '1'. This behavior is achieved by shifting the incoming signal SDATA by time t5 into signal SDATA_DELAYED. As Figure 2 shows, SDATA_DELAYED can be used to latch (or strobe) SDATA. The specification for the timings t1 through t7, tR and tF are shown in Table 5. Figure 2. SDATA/CE Timing Table 5. SDATA/CE Timing Requirements(1) PARAMETER MIN TYP MAX UNIT fSDATACLK Repeat frequency of programming 60 70 80 kHz t1 Low signal: High pulse duration 0.2 t ms t2 Low signal: Low pulse duration during Entering Programming sequence 0.8 t ms Low signal: Low pulse duration during programming bits 0.8 t ms t3 High signal: High pulse duration 0.8 t ms t4 High signal: Low pulse duration during Entering Programming sequence 0.2 t ms High signal: Low pulse duration during programming bits 0.2 t ms t6 Time-out during Entering Programming Mode and Enter Readback Mode until 16 ms next bit must occur. High-pulse or low-pulse duration each must be less than this time; otherwise, a time-out results. t7 EN-high time before first SDATA can be clocked in 3 t ms tR/tF Rise and fall time from 20% to 80% of VDD 2 ns (1) t = 1/fSDATACLK. To program the EEPROM, follow the procedure outlined in this section. Load all the registers in RAM by writing to Word0 ... Word5. After going back to State 2, then go to State 3 (Programming EEPROM, No Locking) or State 4 (Programming EEPROM with Locking). The contents of Word0 … to Word5 are saved in the EEPROM. Wait 10ms in State 3 or State 4 when programming the EEPROM before moving to State 2 (idle state). NOTE: When writing to the device for functionality testing and verification via the serial bus, you are only accessing the RAM. The programming of the CDCE421A can only be performed at VCC = 3.3 V and at room temperature (+25°C). 10 Submit Documentation Feedback Copyright © 2009, Texas Instruments Incorporated Product Folder Link(s): CDCE421A |
Аналогичный номер детали - CDCE431YS |
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Аналогичное описание - CDCE431YS |
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