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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TL082IDRQ1 датащи(PDF) 4 Page - Texas Instruments |
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TL082IDRQ1 датащи(HTML) 4 Page - Texas Instruments |
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4 / 15 page  www.ti.com ELECTRICAL CHARACTERISTICS (1) OPERATING CHARACTERISTICS TL082-Q1 JFET-INPUT OPERATIONAL AMPLIFIER SLOS548 – SEPTEMBER 2007 VCC± = ±15 V (unless otherwise noted) PARAMETER TEST CONDITIONS TA (2) MIN TYP MAX UNIT 25 °C 3 6 VIO Input offset voltage VO = 0, RS = 50 Ω mV Full range 9 Temperature coefficient of input αVIO VO = 0, RS = 50 Ω Full range 18 μV/ °C offset voltage 25 °C 5 100 pA IIO Input offset current(3) VO = 0 Full range 20 nA 25 °C 30 200 pA IIB Input bias current(3) VO = 0 Full range 50 nA Common-mode input –12 VICR 25 °C ±11 V voltage range to 15 RL = 10 kΩ 25 °C ±12 ±13.5 Maximum peak output VOM RL ≥ 10 kΩ ±12 V voltage swing Full range RL ≥ 2 kΩ ±10 ±12 25 °C 50 200 Large-signal differential voltage AVD VO = ±10 V, RL ≥ 2 kΩ V/mV amplification Full range 15 B1 Unity-gain bandwidth 25 °C 3 MHz ri Input resistance 25 °C 1012 Ω CMRR Common-mode rejection ratio VIC = VICR(min), VO = 0, RS = 50 Ω 25 °C 75 86 dB Supply-voltage rejection ratio VCC = ±15 V to ±9 V, kSVR 25 °C 80 86 dB ( ΔVCC±/ΔVIO) VO = 0, RS = 50 Ω ICC Supply current (per amplifier) VO = 0, No load 25 °C 1.4 2.8 mA VO1/VO2 Crosstalk attenuation AVD = 100 25 °C 120 dB (1) All characteristics are measured under open-loop conditions with zero common-mode voltage, unless otherwise specified. (2) Full range for TA is –40°C to 85°C for I-suffix devices and –40°C to 125°C for Q-suffix devices. (3) Input bias currents of an FET-input operational amplifier are normal junction reverse currents, which are temperature sensitive, as shown in Figure 14. Pulse techniques must be used that maintain the junction temperature as close to the ambient temperature as possible. VCC± = ±15 V, TA = 25°C (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SR Slew rate at unity gain VI = 10 V, RL = 2 kΩ, CL = 100 pF, See Figure 1 8 13 V/ μs tr Rise time VI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1 0.05 μs Overshoot factor VI = 20 mV, RL = 2 kΩ, CL = 100 pF, See Figure 1 20 % f = 1 kHz 18 nV/ √Hz Vn Equivalent input noise voltage RS = 20 Ω f = 10 Hz to 10 kHz 4 μV In Equivalent input noise current RS = 20 Ω, f = 1 kHz 0.01 pA/ √Hz THD Total harmonic distortion VIrms = 6 V, f = 1 kHz, AVD = 1, RS ≤ 1 kΩ, RL ≥ 2 kΩ 0.003 % 4 Submit Documentation Feedback Copyright © 2007, Texas Instruments Incorporated |
Аналогичный номер детали - TL082IDRQ1 |
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Аналогичное описание - TL082IDRQ1 |
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