поискавой системы для электроныых деталей |
|
SN74ALS2238FNR датащи(PDF) 1 Page - Texas Instruments |
|
SN74ALS2238FNR датащи(HTML) 1 Page - Texas Instruments |
1 / 11 page SN74ALS2238 32 × 9 × 2 ASYNCHRONOUS BIDIRECTIONAL FIRST IN, FIRST OUT MEMORY SDAS182 − APRIL 1990 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 D Independent Asychronous Inputs and Outputs D Bidirectional D 32 Words by 9 Bits D Programmable Depth D Data Rates from 0 to 40 MHz D Fall-Through Time . . . 22 ns Typ D 3-State Outputs description This 576-bit memory uses advanced low-power Schottky IMPACT-X technology and features high speed and fast fall-through times. It consists of two FIFOs organized as 32 words by 9 bits each. A FIFO memory is a storage device that allows data to be written into and read from its array at independent data rates. These FIFOs are designed to process data at rates from 0 to 40 MHz in a bit-parallel format, word by word. The SN74ALS2238 consists of bus-transceiver circuits, two 32 × 9 FIFOs, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal FIFO memories. Enables GAB and GBA are provided to control the transceiver functions. The SAB and SBA control pins are provided to select whether real-time or stored data is transferred. The circuitry used for select control eliminates the typical decoding glitch that occurs in a multiplexer during the transition between stored and real-time data. A low level selects real-time data and a high selects stored data. Eight fundamental bus-management functions can be performed as shown in Figure 1. Data on the A or B data bus, or both, is written into the FIFOs on a low-to-high transition at the load clock (LDCKA or LDCKB) input and is read out on a low-to-high transition at the unload clock (UNCKA or UNCKB) input. The memory is full when the number of words clocked in exceeds, by the defined depth, the number of words clocked out. When the memory is full, LDCK signals have no effect on the data residing in memory. When the memory is empty, UNCK signals have no effect. Copyright 1990, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. IMPACT-X is a trademark of Texas Instruments Incorporated. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 RSTA DAF A0 A1 A2 GND A3 A4 A5 A6 GND VCC A7 A8 LDCKA FULLA UNCKB EMPTYB SAB GAB RSTB DBF B0 B1 B2 GND B3 B4 B5 B6 GND VCC B7 B8 LDCKB FULLB UNCKA EMPTYA SBA GBA N PACKAGE (TOP VIEW) B2 GND VCC B3 B4 B5 B6 GND VCC B7 B8 39 38 37 36 35 34 33 32 31 30 29 18 19 7 8 9 10 11 12 13 14 15 16 17 GND VCC A3 A4 A5 A6 GND VCC A7 A8 LDCKA 20 21 22 23 FN PACKAGE (TOP VIEW) 54 3 2 1 644 42 41 40 43 24 25 26 27 28 |
Аналогичный номер детали - SN74ALS2238FNR |
|
Аналогичное описание - SN74ALS2238FNR |
|
|
ссылки URL |
Конфиденциальность |
ALLDATASHEETRU.COM |
Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |