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TPIC5323LD датащи(PDF) 8 Page - Texas Instruments |
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TPIC5323LD датащи(HTML) 8 Page - Texas Instruments |
8 / 13 page TPIC5323L 3-CHANNEL INDEPENDENT GATE-PROTECTED SLIS044A – NOVEMBER 1994 – REVISED SEPTEMBER 1995 8 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TYPICAL CHARACTERISTICS 125 100 50 25 0 225 75 4 8 12 16 20 24 175 150 200 CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 250 28 32 36 40 VDS – Drain-to-Source Voltage – V Ciss Coss Crss VGS = 0 f = 1 MHz TJ = 25°C Ciss(0) = 160 pF Coss(0) = 216 pF Crss(0) = 78 pF Figure 11 VSD – Source-to-Drain Voltage – V SOURCE-TO-DRAIN DIODE CURRENT vs SOURCE-TO-DRAIN VOLTAGE 1 110 0.1 TJ = 125°C TJ = 150°C TJ = – 40°C TJ = 25°C TJ = 75°C VGS = 0 2 3 4 5 Figure 12 30 20 10 0 0.5 1 1.5 2 2.5 3 40 50 60 3.5 4 ID = 500 mA TJ = 25°C See Figure 3 VDD = 20 V VDD = 30 V VDD = 48 V VDD = 20 V Qg – Gate Charge – nC DRAIN-TO-SOURCE VOLTAGE AND GATE-TO-SOURCE VOLTAGE vs GATE CHARGE 6 4 2 0 8 10 12 Figure 13 Figure 14 Reverse di/dt – A/ µs REVERSE-RECOVERY TIME vs REVERSE di/dt 180 120 60 0 200 400 220 600 100 300 500 200 160 140 100 40 20 80 D1, D2, and D3 Q1, Q2, and Q3 VDS = 48 V VGS = 0 IS = 500 mA TJ = 25°C See Figure 1 |
Аналогичный номер детали - TPIC5323LD |
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Аналогичное описание - TPIC5323LD |
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