 |
поискавой системы для электроныых деталей |
|
|
поискавой системы для электроныых деталей |
|
BUF634UE4 датащи(PDF) 2 Page - Burr-Brown (TI) |
|
|
||||||||||||||||||||||||||||||
BUF634UE4 датащи(HTML) 2 Page - Burr-Brown (TI) |
|
|
2 / 20 page  2 ® BUF634 SPECIFICATIONS ELECTRICAL The information provided herein is believed to be reliable; however, BURR-BROWN assumes no responsibility for inaccuracies or omissions. BURR-BROWN assumes no responsibility for the use of this information, and all use of such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. BURR-BROWN does not authorize or warrant any BURR-BROWN product for use in life support devices and/or systems. V+ V– V O V IN BW V+ V– V O V IN T Specifications the same as Low Quiescent Mode. NOTES: (1) Tests are performed on high speed automatic test equipment, at approximately 25 °C junction temperature. The power dissipation of this product will cause some parameters to shift when warmed up. See typical performance curves for over-temperature performance. (2) Limited output swing available at low supply voltage. See Output voltage specifications. (3) Typical when all leads are soldered to a circuit board. See text for recommendations. At TA = +25°C(1), VS = ±15V, unless otherwise noted. BUF634P, U, T, F LOW QUIESCENT CURRENT MODE WIDE BANDWIDTH MODE PARAMETER CONDITION MIN TYP MAX MIN TYP MAX UNITS INPUT Offset Voltage ±30 ±100 TT mV vs Temperature Specified Temperature Range ±100 T µV/°C vs Power Supply VS = ±2.25V(2) to ±18V 0.1 1 TT mV/V Input Bias Current VIN = 0V ±0.5 ±2 ±5 ±20 µA Input Impedance RL = 100Ω 80 || 8 8 || 8 M Ω || pF Noise Voltage f = 10kHz 4 T nV/ √Hz GAIN RL = 1kΩ, VO = ±10V 0.95 0.99 TT V/V RL = 100Ω, VO = ±10V 0.85 0.93 TT V/V RL = 67Ω, VO = ±10V 0.8 0.9 TT V/V OUTPUT Current Output, Continuous ±250 T mA Voltage Output, Positive IO = 10mA (V+) –2.1 (V+) –1.7 TT V Negative IO = –10mA (V–) +2.1 (V–) +1.8 TT V Positive IO = 100mA (V+) –3 (V+) –2.4 TT V Negative IO = –100mA (V–) +4 (V– ) +3.5 TT V Positive IO = 150mA (V+) –4 (V+) –2.8 TT V Negative IO = –150mA (V–) +5 (V–) +4 TT V Short-Circuit Current ±350 ±550 ±400 T mA DYNAMIC RESPONSE Bandwidth, –3dB RL = 1kΩ 30 180 MHz RL = 100Ω 20 160 MHz Slew Rate 20Vp-p, RL = 100Ω 2000 T V/ µs Settling Time, 0.1% 20V Step, RL = 100Ω 200 T ns 1% 20V Step, RL = 100Ω 50 T ns Differential Gain 3.58MHz, VO = 0.7V, RL = 150Ω 4 0.4 % Differential Phase 3.58MHz, VO = 0.7V, RL = 150Ω 2.5 0.1 ° POWER SUPPLY Specified Operating Voltage ±15 T V Operating Voltage Range ±2.25(2) ±18 TT V Quiescent Current, IQ IO = 0 ±1.5 ±2 ±15 ±20 mA TEMPERATURE RANGE Specification –40 +85 TT °C Operating –40 +125 TT °C Storage –55 +125 TT °C Thermal Shutdown Temperature, TJ 175 T °C Thermal Resistance, θ JA “P” Package(3) 100 T °C/W θ JA “U” Package(3) 150 T °C/W θ JA “T” Package(3) 65 T °C/W θ JC “T” Package 6 T °C/W θ JA “F” Package(3) 65 T °C/W θ JC “F” Package 6 T °C/W |
Аналогичный номер детали - BUF634UE4 |
|
Аналогичное описание - BUF634UE4 |
|
|
|
ссылки URL |
| Конфиденциальность |
| ALLDATASHEETRU.COM |
| Вашему бизинису помогли Аллдатащит? [ DONATE ] |
Что такое Аллдатащит | реклама | контакт | Конфиденциальность | обмен ссыками | поиск по производителю All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Russian ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
