поискавой системы для электроныых деталей |
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TC7SH08FU датащи(PDF) 1 Page - Toshiba Semiconductor |
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TC7SH08FU датащи(HTML) 1 Page - Toshiba Semiconductor |
1 / 7 page TC7SH08F/FU 2009-09-09 1 TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC7SH08F, TC7SH08FU 2-Input AND Gate Features • High speed operation : tpd = 4.3ns (typ.) at VCC = 5V, 15pF • Low power dissipation : ICC = 2 μA (max) at Ta = 25°C • High noise immunity : VNIH = VNIL = 28% VCC (min) • 5.5-V tolerant inputs • Wide operating voltage range : VCC = 2 to 5.5 V Marking Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Supply voltage VCC − 0.5 to 7 V DC input voltage VIN − 0.5 to 7 V DC output voltage VOUT − 0.5 to VCC + 0.5 V Input diode current IIK − 20 mA Output diode current IOK ± 20 (Note1) mA DC output current IOUT ± 25 mA DC VCC/ground current ICC ± 50 mA Power dissipation PD 200 mW Storage temperature Tstg − 65 to 150 °C Lead temperature (10 s) TL 260 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: VOUT < GND, VOUT > VCC TC7SH08F (SMV) TC7SH08FU (USV) Weight SSOP5-P-0.95 : 0.016 g (typ.) SSOP5-P-0.65A : 0.006 g (typ.) Pin Assignment (top view) Product name H 2 5 VCC 4 OUT Y IN A 2 GND 3 IN B 1 |
Аналогичный номер детали - TC7SH08FU_09 |
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Аналогичное описание - TC7SH08FU_09 |
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