TPD1045F

2006-10-31

3

Truth Table

Output State

State

L

H

OFF

H

L

ON

Normal

L

H

OFF

H

H

current limiting(switcing)

Overcurrent

L

H

OFF

H

H

ON

Overtemperature

Characteristics

Symbol

Rating

Unit

Drain-source voltage

50

V

Drain current

Internally Limited

A

Input voltage

−0.3~7

V

Power dissipation(Note 3-a)

1.1

W

Power dissipation(Note 3-b)

0.425

W

Single Pulse Active Clamp Tolerance

(Note 4)

158

mJ

Active Clamp Current

5

A

Repetitive Active Clamp Tolerance

(Note 3-a) (Note 5)

0.11

mJ

Operating temperature

−40~125

°C

Channel temperature

150

°C

Storage temperature

−55~150

°C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings and the operating ranges.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

max

Unit

113.5 (Note 3-a)

Thermal resistance, channel to

ambient

294.0 (Note 3-b)

°C /W

Note 3: 3-a : glass epoxy board (a)

3-b : glass epoxy board (b)

Note 5 : Repetitive rating : Pulse Width limited by maximum channel temperature.

FR-4

25.4×25.4×0.8

(unit：mm)

FR-4

25.4×25.4×0.8

(unit：mm)