CXK5T8257BTM datasheet(3/10 Pages) SONY

номер детали	CXK5T8257BTM

подробное описание детали	32768-word X 8-bit High Speed CMOS Static RAM

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производитель	SONY [Sony Corporation]

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CXK5T8257BTM/BYM/BM

Electrical Characteristics

• DC characteristics

(VCC = 2.7 to 3.6V, GND = 0V, Ta = –25 to +85°C)

Item

Symbol

Test Conditions

Min.

Typ.∗2

Max.

Unit

Input leakage current

Output leakage

current

Operating power

supply current

Average operating

current

Standby current

Output high

voltage

Output low

voltage

ILI

ILO

ICC1

ICC2

ISB1

ISB2

VOH

VOL

VIN = GND to VCC

CE = VIH

OE = VIH or WE = VIL

VI/O = GND to VCC

CE = VIL

VIN = VIH or VIL

IOUT = 0mA

Min. cycle

duty = 100%, IOUT = 0mA

CE

≥ VCC – 0.2V

CE = VIH

IOH = –2mA

IOL = 2.0mA

–0.5

—

2.4

—

0.5

2

35∗4

35

7.0

3.5

—

0.7

—

0.4

—

0.9

18∗3

18

—

0.12

0.06

—

µA

mA

µA

mA

V

∗2 V

CC

= 3.3V, Ta = 25°C

∗3 I

CC2

= 21mA for 3.3V operation (VCC = 3.3V ± 0.3V)

∗4 I

CC3

= 40mA for 3.3V operation (VCC = 3.3V ± 0.3V)

10LLX

12LLX

–25 to +85°C

–25 to +70°C

+25°C

DC Recommended Operating Conditions

(Ta = –25 to +85°C, GND = 0V)

∗1 V

IL

=–3.0V Min. for pulse width less than 50ns.

Supply voltage

Input high voltage

Input low voltage

Item

Symbol

Min.

VCC = 2.7 to 3.6V

VCC = 3.3V ± 0.3V

Typ.

Max.

Unit

VCC

VIH

VIL

2.7

2.4

–0.3∗1

3.3

—

3.6

VCC + 0.3

0.4

Min.

Typ.

Max.

3.0

2.2

–0.3∗1

3.3

—

3.6

VCC + 0.3

0.6

V

Аналогичный номер детали - CXK5T8257BTM

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Аналогичное описание - CXK5T8257BTM

производитель	номер детали	датащи	подробное описание детали
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