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CXK5V8257BYM датащи(PDF) 1 Page - Sony Corporation |
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CXK5V8257BYM датащи(HTML) 1 Page - Sony Corporation |
1 / 9 page – 1 – CXK5V8257BTM/BYM/BM -70LL/10LL E93836A5Z-ST 32768-word × 8-bit High Speed CMOS Static RAM Description The CXK5V8257BTM/BYM/BM is 262,144 bits high speed CMOS static RAM organized as 32768- words by 8 bits. A polysilicon TFT cell technology realized extermely low stand-by current and higher data retention stability. Operating on a single 3.3V supply, directly LVTTL compatible (All inputs and outputs). And special feature are, low power consumption, high speed and broad package line-up. The CXK5V8257BTM/BYM/BM is a suitable RAM for portable equipment with battery back up. Features • Single +3.3V supply: 3.3V ±0.3V • Directly LVTTL compatible: All inputs and outputs • Fast access time: (Access time) CXK5V8257BTM/BYM/BM -70LL 70ns (Max.) -10LL 100ns (Max.) • Low standby current: CXK5V8257BTM/BYM/BM -70LL/10LL 3.5µA (Max.) • Low power data retention: 2.0V (Min.) • Available in many packages CXK5V8257BTM/BYM 8mm × 13.4mm 28 pin TSOP Package CXK5V8257BM 450mil 28 pin SOP Package Function 32768-word × 8 bit static RAM Structure Silicon gate CMOS IC Block Diagram Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. CXK5V8257BTM 28 pin TSOP (Plastic) CXK5V8257BYM 28 pin TSOP (Plastic) CXK5V8257BM 28 pin SOP (Plastic) Memory Matrix 512 × 512 I /O Gate Column Decoder Row Decoder Buffer Buffer Buffer I /O Buffer VCC GND I /O1 I /O8 A14 A13 A12 A11 A9 A8 A7 A6 A5 OE WE CE A4 A10 A3 A2 A1 A0 For the availability of this product, please contact the sales office. |
Аналогичный номер детали - CXK5V8257BYM |
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Аналогичное описание - CXK5V8257BYM |
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