FDD3N50NZ Rev. C0

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2

Package Marking and Ordering Information

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking

Device

Package

Reel Size

Tape Width

Quantity

FDD3N50NZ

FDD3N50NZTM

D-PAK

380mm

16mm

2500

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

Drain to Source Breakdown Voltage

500

-

-

V

Breakdown Voltage Temperature

Coefficient

-

0.5

-

Zero Gate Voltage Drain Current

-

-

1

A

-

10

Gate to Body Leakage Current

-

-

±10

A

Gate Threshold Voltage

3.0

-

5.0

V

Static Drain to Source On Resistance

-

2.1

2.5



Forward Transconductance

(Note 4)

-

1.9

-

S

Input Capacitance

f = 1MHz

-

210

280

pF

Output Capacitance

-

30

45

pF

Reverse Transfer Capacitance

-

2.5

5

pF

Total Gate Charge at 10V

(Note 4, 5)

-

6.2

8

nC

Gate to Source Gate Charge

-

1.4

-

nC

Gate to Drain “Miller” Charge

-

3.1

-

nC

Turn-On Delay Time

(Note 4, 5)

-10

30

ns

Turn-On Rise Time

-

15

40

ns

Turn-Off Delay Time

-

26

60

ns

Turn-Off Fall Time

-

17

45

ns

Maximum Continuous Drain to Source Diode Forward Current

-

-

2.5

A

Maximum Pulsed Drain to Source Diode Forward Current

-

-

10

A

Drain to Source Diode Forward Voltage

-

-

1.4

V

Reverse Recovery Time

(Note 4)

-

190

-

ns

Reverse Recovery Charge

-

0.52

-

C

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature

4. Pulse Test: Pulse width

 300s, Dual Cycle  2%

5. Essentially Independent of Operating Temperature Typical Characteristics