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FDS6692A датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6692A датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 7 page FDS6692A Rev. A 2 www.fairchildsemi.com 2 MOSFET Maximum Ratings T A = 25°C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Electrical Characteristics T J = 25°C unless otherwise noted Off Characteristics On Characteristics Dynamic Characteristics Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V ID Drain Current 9A Continuous (TA = 25oC, VGS = 10V, RθJA = 85oC/W) Continuous (TA = 25oC, VGS = 4.5V, RθJA = 85oC/W) 8.2 A Pulsed 48 A EAS Single Pulse Avalanche Energy (Note 1) 79 mJ PD Power dissipation 1.47 W TJ, TSTG Operating and Storage Temperature -55 to 150 oC RθJA Thermal Resistance, Junction to Ambient at 10 seconds (Note 3) 50 oC/W RθJA Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3) 85 oC/W Device Marking Device Package Reel Size Tape Width Quantity FDS6692A FDS6692A SO-8 330mm 12mm 2500 units Symbol Parameter Test Conditions Min Typ Max Units BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 30 - - V ∆BVDSS ∆TJ Breakdown Voltage Temp. Coefficient ID = 250µA, Referenced to 25oC -21 - mV/oC IDSS Zero Gate Voltage Drain Current VDS = 24V - - 1 µA VGS = 0V TJ = 150oC - - 250 IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA VGS(TH) Gate to Source Threshold Voltage VGS = VDS, ID = 250µA 1.2 - 2.5 V ∆VGS(TH) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250µA, Referenced to 25oC --5 - mV/oC RDS(ON) Drain to Source On Resistance ID = 9A, VGS = 10V - 8.2 11.5 m Ω ID = 8.2A, VGS = 4.5V - 11 14.5 ID = 9A, VGS = 10V, TJ = 150oC -13 19 CISS Input Capacitance VDS = 15V, VGS = 0V, f = 1MHz - 1210 1610 pF COSS Output Capacitance - 330 440 pF CRSS Reverse Transfer Capacitance - 138 210 pF RG Gate Resistance f = 1MHz - 2.0 - Ω Qg(TOT) Total Gate Charge at 10V VGS = 0V to 10V VDD = 15V ID = 9A Ig = 1.0mA -22 29 nC Qg(5) Total Gate Charge at 5V VGS = 0V to 5V - 12 16 nC Qg(TH) Threshold Gate Charge VGS = 0V to 1V - 0.93 1.2 nC Qgs Gate to Source Gate Charge - 3 - nC Qgs2 Gate Charge Threshold to Plateau - 2.1 - nC Qgd Gate to Drain “Miller” Charge - 4.8 - nC |
Аналогичный номер детали - FDS6692A_10 |
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Аналогичное описание - FDS6692A_10 |
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