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FDS6930B датащи(PDF) 2 Page - Fairchild Semiconductor |
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FDS6930B датащи(HTML) 2 Page - Fairchild Semiconductor |
2 / 5 page 2 www.fairchildsemi.com FDS6930B Rev. A1 Electrical Characteristics TA = 25°C unless otherwise noted Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% 3. Trr parameter will not be subjected to 100% production testing. Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C 26 mV/ °C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ = 55°C 1 10 µA IGSS Gate–Source Leakage VGS = ±20 V, VDS = 0 V ±100 nA On Characteristics (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.9 3 V ∆VGS(th) ∆TJ Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C –4.6 mV/ °C RDS(on) Static Drain–Source On–Resistance VGS = 10 V, ID = 5.5 A VGS = 4.5 V, ID = 4.8 A VGS = 10 V, ID = 5.5 A, TJ = 125°C 31 40 45 38 50 62 m Ω ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 20 A gFS Forward Transconductance VDS = 5 V, ID = 5.5 A 19 S Dynamic Characteristics Ciss Input Capacitance VDS = 15 V, V GS = 0 V, f = 1.0 MHz 310 412 pF Coss Output Capacitance 90 120 pF Crss Reverse Transfer Capacitance 40 60 pF RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 1.9 Ω Switching Characteristics (Note 2) td(on) Turn–On Delay Time VDD = 15 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω 612 ns tr Turn–On Rise Time 612 ns td(off) Turn–Off Delay Time 16 28 ns tf Turn–Off Fall Time 24 ns Qg Total Gate Charge VDS = 15 V, ID = 5.5 A, VGS = 5 V 2.7 3.8 nC Qgs Gate–Source Charge 1.0 nC Qgd Gate–Drain Charge 0.7 nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain–Source Diode Forward Current 1.3 A VSD Drain–Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.8 1.2 V trr Diode Reverse Recovery Time (note3) IF = 5.5 A, diF/dt = 100 A/µs 16 32 nS Qrr Diode Reverse Recovery Charge 6 nC a) 78°C/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135°C/W when mounted on a minimum pad. |
Аналогичный номер детали - FDS6930B_10 |
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Аналогичное описание - FDS6930B_10 |
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