поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

FDS6930B датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS6930B
подробное описание детали  Dual N-Channel Logic Level PowerTrench짰 MOSFET
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS6930B датащи(HTML) 2 Page - Fairchild Semiconductor

  FDS6930B_10 Datasheet HTML 1Page - Fairchild Semiconductor FDS6930B_10 Datasheet HTML 2Page - Fairchild Semiconductor FDS6930B_10 Datasheet HTML 3Page - Fairchild Semiconductor FDS6930B_10 Datasheet HTML 4Page - Fairchild Semiconductor FDS6930B_10 Datasheet HTML 5Page - Fairchild Semiconductor  
Zoom Inzoom in Zoom Outzoom out
 2 / 5 page
background image
2
www.fairchildsemi.com
FDS6930B Rev. A1
Electrical Characteristics TA = 25°C unless otherwise noted
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%
3. Trr parameter will not be subjected to 100% production testing.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA30
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
26
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V, TJ = 55°C
1
10
µA
IGSS
Gate–Source Leakage
VGS = ±20 V, VDS = 0 V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1
1.9
3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = 250 µA, Referenced to 25°C
–4.6
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V, ID = 5.5 A
VGS = 4.5 V, ID = 4.8 A
VGS = 10 V, ID = 5.5 A, TJ = 125°C
31
40
45
38
50
62
m
ID(on)
On–State Drain Current
VGS = 10 V, VDS = 5 V
20
A
gFS
Forward Transconductance
VDS = 5 V, ID = 5.5 A
19
S
Dynamic Characteristics
Ciss
Input Capacitance
VDS = 15 V, V GS = 0 V,
f = 1.0 MHz
310
412
pF
Coss
Output Capacitance
90
120
pF
Crss
Reverse Transfer Capacitance
40
60
pF
RG
Gate Resistance
VGS = 15 mV, f = 1.0 MHz
1.9
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
612
ns
tr
Turn–On Rise Time
612
ns
td(off)
Turn–Off Delay Time
16
28
ns
tf
Turn–Off Fall Time
24
ns
Qg
Total Gate Charge
VDS = 15 V, ID = 5.5 A,
VGS = 5 V
2.7
3.8
nC
Qgs
Gate–Source Charge
1.0
nC
Qgd
Gate–Drain Charge
0.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
1.3
A
VSD
Drain–Source Diode Forward Voltage
VGS = 0 V, IS = 1.3 A (Note 2)
0.8
1.2
V
trr
Diode Reverse Recovery Time (note3)
IF = 5.5 A, diF/dt = 100 A/µs
16
32
nS
Qrr
Diode Reverse Recovery Charge
6
nC
a) 78°C/W when mounted
on a 0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.


Аналогичный номер детали - FDS6930B_10

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS6930B FAIRCHILD-FDS6930B Datasheet
532Kb / 5P
   Dual N-Channel Logic Level PowerTrench MOSFET
More results

Аналогичное описание - FDS6930B_10

производительномер деталидатащиподробное описание детали
logo
Fairchild Semiconductor
FDS8949 FAIRCHILD-FDS8949_10 Datasheet
544Kb / 6P
   Dual N-Channel Logic Level PowerTrench짰 MOSFET
logo
ON Semiconductor
FDMS9408L-F085 ONSEMI-FDMS9408L-F085 Datasheet
566Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
August-2017, Rev. 2
logo
Fairchild Semiconductor
FDC5661N_F085 FAIRCHILD-FDC5661N_F085 Datasheet
425Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
logo
ON Semiconductor
FDD9407L-F085 ONSEMI-FDD9407L-F085 Datasheet
545Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
August-2017, Rev. 2
FDMS9411L-F085 ONSEMI-FDMS9411L-F085 Datasheet
466Kb / 6P
   N-Channel Logic Level PowerTrench짰 MOSFET
August-2017, Rev. 2
logo
Fairchild Semiconductor
FDB8860 FAIRCHILD-FDB8860_08 Datasheet
343Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
FDB8832_F085 FAIRCHILD-FDB8832_F085 Datasheet
404Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
FDB8860_F085 FAIRCHILD-FDB8860_F085 Datasheet
158Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
FDD24AN06L_F085 FAIRCHILD-FDD24AN06L_F085 Datasheet
861Kb / 8P
   N-Channel Logic Level PowerTrench짰 MOSFET
logo
ON Semiconductor
FDB9403L-F085 ONSEMI-FDB9403L-F085 Datasheet
537Kb / 7P
   N-Channel Logic Level PowerTrench짰 MOSFET
August-2017, Rev. 2
More results


Html Pages

1 2 3 4 5


датащи скачать

Go To PDF Page


ссылки URL




Конфиденциальность
ALLDATASHEETRU.COM
Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com