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FDS8935 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS8935 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page November 2010 ©2010 Fairchild Semiconductor Corporation FDS8935 Rev.C www.fairchildsemi.com 1 FDS8935 Dual P-Channel PowerTrench® MOSFET -80 V, -2.1 A, 183 m Ω Features Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A Max rDS(on) = 247 mΩ at VGS = -4.5 V, ID = -1.9 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been optimized for rDS(on), switching performance and ruggedness. Applications Load Switch Synchronous Rectifier G2 S1 G1 S2 D2 D2 D1 D1 5 6 7 8 3 2 1 4 Pin 1 SO-8 D1 D1 D2 D2 S2 S1 G1 G2 4 3 2 1 5 6 7 8 Q2 Q1 MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage -80 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous -2.1 A -Pulsed -10 EAS Single Pulse Avalanche Energy (Note 3) 37 mJ PD Power Dissipation TA = 25 °C (Note 1a) 3.1 W Power Dissipation TA = 25 °C (Note 1b) 1.6 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 40 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 78 Device Marking Device Package Reel Size Tape Width Quantity FDS8935 FDS8935 SO-8 13 ’’ 12 mm 2500 units |
Аналогичный номер детали - FDS8935 |
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Аналогичное описание - FDS8935 |
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