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FDS86106 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS86106 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page July 2011 ©2011 Fairchild Semiconductor Corporation FDS86106 Rev. C2 www.fairchildsemi.com 1 FDS86106 N-Channel Power Trench® MOSFET 100 V, 3.4 A, 105 m Ω Features Max rDS(on) = 105 mΩ at VGS = 10 V, ID = 3.4 A Max rDS(on) = 171 mΩ at VGS = 6 V, ID = 2.7 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness . Applications Synchronous Rectifier Primary Switch For Bridge Topology MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 3.4 A -Pulsed 15 EAS Single Pulse Avalanche Energy (Note 3) 13 mJ PD Power Dissipation TA = 25 °C (Note 1a) 5.0 W Power Dissipation TA = 25 °C (Note 1b) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 2.5 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS86106 FDS86106 SO-8 13 ’’ 12 mm 2500 units SO-8 D D D D S S S G Pin 1 G S S S D D D D 5 6 7 8 3 2 1 4 |
Аналогичный номер детали - FDS86106 |
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Аналогичное описание - FDS86106 |
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