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FDS86140 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS86140 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page March 2011 ©2011 Fairchild Semiconductor Corporation FDS86140 Rev.C www.fairchildsemi.com 1 FDS86140 N-Channel PowerTrench® MOSFET 100 V, 11.2 A, 9.8 m Ω Features Max rDS(on) = 9.8 mΩ at VGS = 10 V, ID = 11.2 A Max rDS(on) = 16 mΩ at VGS = 6 V, ID = 9 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness . Applications DC/DC Converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Swith for 24 V and 48 V Systems High Voltage Synchronous Rectifier SO-8 D D D D S S S G Pin 1 G S S S D D D D 5 6 7 8 3 2 1 4 MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 11.2 A -Pulsed 50 EAS Single Pulse Avalanche Energy (Note 3) 264 mJ PD Power Dissipation TC = 25 °C (Note 1) 5.0 W Power Dissipation TA = 25 °C (Note 1a) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS86140 FDS86140 SO-8 13’’ 12 mm 2500 units |
Аналогичный номер детали - FDS86140 |
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Аналогичное описание - FDS86140 |
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