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FDS86141 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS86141 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 7 page August 2011 © 2007 Fairchild Semiconductor Corporation FDS86141 • Rev. C4 www.fairchildsemi.com 1 FDS86141 N-Channel PowerTrench® MOSFET 100 V, 7 A, 23 m Features Maximum R DS(on) = 23 m at VGS = 10 V, ID = 7 A Maximum R DS(on) = 36 m at VGS = 6 V, ID = 5.5 A High-Performance Trench Technology; Extremely Low R DS(on) 100% UIL Tested RoHS Compliant General Description This N-channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and maintain superior switching performance. Applications DC-DC Conversion MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 100 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 7 A -Pulsed 30 EAS Single Pulse Avalanche Energy (Note 3) 121 mJ PD Power Dissipation TA = 25 °C (Note 1a) 5.0 W Power Dissipation TA = 25 °C (Note 1b) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RJC Thermal Resistance, Junction to Case (Note 1) 2.5 °C/W RJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS86141 FDS86141 SO-8 13 ’’ 12 mm 2500 units SO-8 D D D D S S S G Pin 1 G S S S D D D D 5 6 7 8 3 2 1 4 |
Аналогичный номер детали - FDS86141 |
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Аналогичное описание - FDS86141 |
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