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FDS86240 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS86240 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page June 2010 ©2010 Fairchild Semiconductor Corporation FDS86240 Rev.C www.fairchildsemi.com 1 FDS86240 N-Channel PowerTrench® MOSFET 150 V, 7.5 A, 19.8 m Ω Features Max rDS(on) = 19.8 mΩ at VGS = 10 V, ID = 7.5 A Max rDS(on) = 26 mΩ at VGS = 6 V, ID = 6.4 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness . Applications DC/DC converters and Off-Line UPS Distributed Power Architectures and VRMs Primary Switch for 24 V and 48 V Systems High Voltage Synchronous Rectifier SO-8 D D D D S S S G Pin 1 G S S S D D D D 5 6 7 8 3 2 1 4 MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 150 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 7.5 A -Pulsed 30 EAS Single Pulse Avalanche Energy (Note 3) 220 mJ PD Power Dissipation TC = 25 °C (Note 1) 5.0 W Power Dissipation TA = 25 °C (Note 1a) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS86240 FDS86240 SO-8 13 ’’ 12 mm 2500 units |
Аналогичный номер детали - FDS86240 |
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Аналогичное описание - FDS86240 |
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