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FDS86540 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS86540 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 6 page May 2012 ©2012 Fairchild Semiconductor Corporation FDS86540 Rev. C www.fairchildsemi.com 1 FDS86540 N-Channel PowerTrench® MOSFET 60 V, 18 A, 4.5 m Ω Features Max rDS(on) = 4.5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.4 mΩ at VGS = 8 V, ID = 16.5 A High performance trench technologh for extremely low rDS(on) High power and current handing capability in a widely used surface mount package 100% UIL Tested RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance . Applications Primary Switch in isolated DC-DC Synchronous Rectifier Load Switch SO-8 D D D D S S S G Pin 1 G S S S D D D D 5 6 7 8 3 2 1 4 MOSFET Maximum Ratings T A = 25 °C unless otherwise noted Thermal Characteristics Package Marking and Ordering Information Symbol Parameter Ratings Units VDS Drain to Source Voltage 60 V VGS Gate to Source Voltage ±20 V ID Drain Current -Continuous 18 A -Pulsed 120 EAS Single Pulse Avalanche Energy (Note 3) 194 mJ PD Power Dissipation TC = 25 °C (Note 1) 5.0 W Power Dissipation TA = 25 °C (Note 1a) 2.5 TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C RθJC Thermal Resistance, Junction to Case (Note 1) 25 °C/W RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 Device Marking Device Package Reel Size Tape Width Quantity FDS86540 FDS86540 SO-8 13’’ 12 mm 2500 units |
Аналогичный номер детали - FDS86540 |
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Аналогичное описание - FDS86540 |
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