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FDS89141 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS89141
подробное описание детали  Dual N-Channel PowerTrench짰 MOSFET 100 V, 3.5 A, 62 m廓
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS89141 датащи(HTML) 2 Page - Fairchild Semiconductor

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©2010 Fairchild Semiconductor Corporation
2
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FDS89141 Rev. C
Electrical Characteristics T
J = 25°C unless otherwise noted
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
100
V
ΔBV
DSS
ΔT
J
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
69
mV/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA2
3.1
4
V
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-9
mV/°C
rDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 3.5 A
47
62
m
Ω
VGS = 6 V, ID = 2.8 A
63
100
VGS = 10 V, ID = 3.5 A, TJ = 125 °C
81
107
gFS
Forward Transconductance
VDS = 10 V, ID = 3.5 A
14.7
S
Ciss
Input Capacitance
VDS = 50 V, VGS = 0 V,
f = 1MHz
299
398
pF
Coss
Output Capacitance
70
93
pF
Crss
Reverse Transfer Capacitance
4.7
7
pF
Rg
Gate Resistance
1.0
Ω
td(on)
Turn-On Delay Time
VDD = 50 V, ID = 3.5 A,
VGS = 10 V, RGEN = 6 Ω
510
ns
tr
Rise Time
1.4
10
ns
td(off)
Turn-Off Delay Time
9.8
20
ns
tf
Fall Time
2.2
10
ns
Qg(TOT)
Total Gate Charge
VGS = 0 V to 10 V
VDD = 50 V,
ID = 3.5 A
5.1
7.1
nC
Qg(TOT)
Total Gate Charge
VGS = 0 V to 5 V
2.9
4.1
nC
Qgs
Gate to Source Charge
1.4
nC
Qgd
Gate to Drain “Miller” Charge
1.3
nC
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 3.5 A
(Note 2)
0.8
1.3
V
VGS = 0 V, IS = 2 A
(Note 2)
0.8
1.2
trr
Reverse Recovery Time
IF = 3.5 A, di/dt = 100 A/μs
33
53
ns
Qrr
Reverse Recovery Charge
23
37
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in
2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
2. Pulse Test: Pulse Width < 300
μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3.0 mH, IAS = 5.0 A, VDD = 100 V, VGS = 10V.
b) 135°C/W when
mounted on a
minimun pad
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper


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