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FM25W256 датащи(PDF) 1 Page - Cypress Semiconductor

номер детали FM25W256
подробное описание детали  256Kb Wide Voltage SPI F-RAM
Download  13 Pages
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производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25W256 датащи(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.0
Oct.12
Page 1 of 13
FM25W256
256Kb Wide Voltage SPI F-RAM
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High Endurance 100 Trillion (10
14) Read/Writes
38 Year Data Retention (@ +75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Write Protection Scheme
Hardware Protection
Software Protection
Low Power Operation
Wide Voltage Operation 2.7V – 5.5V
15 µA (typ.) Standby Current
Industry Standard Configurations
Industrial Temperature -40C to +85C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25W256 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system
level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM25W256 performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. In addition, the product offers
substantial write endurance compared with other
nonvolatile memories. The FM25W256 is capable of
supporting 10
14
read/write cycles, or 100 million
times more write cycles than EEPROM.
These capabilities make the FM25W256 ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25W256 provides substantial benefits to
users of serial EEPROM as a hardware drop-in
replacement. The FM25W256 uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage (2.7 to 5.5V)
VSS
Ground
Ordering Information
FM25W256-G
“Green”/RoHS 8-pin SOIC
FM25W256-GTR
“Green”/RoHS 8-pin SOIC,
Tape & Reel
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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