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FM25040B-G датащи(PDF) 1 Page - Cypress Semiconductor

номер детали FM25040B-G
подробное описание детали  4Kb Serial 5V F-RAM Memory
Download  13 Pages
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производитель  CYPRESS [Cypress Semiconductor]
домашняя страница  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

FM25040B-G датащи(HTML) 1 Page - Cypress Semiconductor

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This product conforms to specifications per the terms of the Ramtron
Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal
1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status.
(800) 545-FRAM, (719) 481-7000
Rev. 3.0
www.ramtron.com
Jan. 2012
Page 1 of
13
FM25040B
4Kb Serial 5V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 1 Trillion (10
12) Read/Writes
38 year Data Retention
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz maximum Bus Frequency
Direct hardware replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
250 A Active Current (1 MHz)
4 A (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40 C to +85 C
8-pin “Green”/RoHS SOIC (-G)
Description
The FM25040B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile but operates in other respects as a RAM.
It provides reliable data retention for 38 years while
eliminating the complexities, overhead, and system
level reliability problems caused by EEPROM and
other nonvolatile memories.
The FM25040B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after it has been
successfully transferred to the device. The next bus
cycle may commence immediately without the need
for data polling. The FM25040B is capable of
supporting up to 10
12 read/write cycles, or a million
times more write cycles than EEPROM.
These capabilities make the FM25040B ideal for
nonvolatile memory applications requiring frequent
or rapid writes. Examples range from data collection,
where the number of write cycles may be critical, to
demanding industrial controls where the long write
time of EEPROM can cause data loss.
The FM25040B provides substantial benefits to users
of
serial
EEPROM,
in
a
hardware
drop-in
replacement.
The FM25040B uses the high-speed
SPI bus, which enhances the high-speed write
capability of F-RAM technology. The specifications
are guaranteed over an industrial temperature range
of -40°C to +85°C.
Pin Configuration
Pin Names
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage 5V
VSS
Ground
Ordering Information
FM25040B-G
“Green” 8-pin SOIC
FM25040B-GTR
“Green” 8-pin SOIC,
Tape & Reel
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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