Features

• High Surge Capability

DO-5 Package

Parameter

Symbol

1N1183 (R) 1N1184 (R)

1N1188 (R) 1N1190 (R)

Unit

Repetitive peak reverse

V

50

100

400

600

V

1N1183A thru 1N1190AR

200

1N1186 (R)

Silicon Standard

Recovery Diode

Conditions

voltage

50

100

400

600

V

RMS reverse voltage

35

70

280

420

V

DC blocking voltage

50

100

400

600

V

Continuous forward current

40

40

40

40

A

Operating temperature

-65 to 200 -65 to 200

-65 to 200 -65 to 200

°C

Storage temperature

-65 to 200 -65 to 200

-65 to 200 -65 to 200

°C

Parameter

Symbol

1N1183 (R) 1N1184 (R)

1N1188 (R) 1N1190 (R)

Unit

Diode forward voltage

1.1

1.1

1.1

1.1

10

10

10

10

μA

15

15

15

15

mA

Thermal characteristics

Thermal resistance, junction -

case

1.25

1.25

1.25

1.25

°C/W

200

A

Reverse current

800

800

800

-65 to 200

Conditions

200

140

800

800

-65 to 200

40

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

10

1N1186 (R)

1.25

1.1

V

15

Surge non-repetitive forward

current, Half Sine Wave

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