FDD2572

_F085 Rev. A

8

www.fairchildsemi.com

PSPICE Electrical Model

.SUBCKT FDD2572 2 1 3 ;

rev April 2002

CA 12 8 5.5e-10

Cb 15 14 7.4e-10

Cin 6 8 1.7e-9

Dbody 7 5 DbodyMOD

Dbreak 5 11 DbreakMOD

Dplcap 10 5 DplcapMOD

Ebreak 11 7 17 18 160

Eds 14 8 5 8 1

Egs 13 8 6 8 1

Esg 6 10 6 8 1

Evthres 6 21 19 8 1

Evtemp 20 6 18 22 1

It 8 17 1

Lgate 1 9 1.21e-9

Ldrain 2 5 1.0e-9

Lsource 3 7 4.45e-9

RLgate 1 9 12.1

RLdrain 2 5 10

RLsource 3 7 44.5

Mmed 16 6 8 8 MmedMOD

Mstro 16 6 8 8 MstroMOD

Mweak 16 21 8 8 MweakMOD

Rbreak 17 18 RbreakMOD 1

Rdrain 50 16 RdrainMOD 35e-3

Rgate 9 20 1.6

RSLC1 5 51 RSLCMOD 1.0e-6

RSLC2 5 50 1.0e3

Rsource 8 7 RsourceMOD 3.0e-3

Rvthres 22 8 RvthresMOD 1

Rvtemp 18 19 RvtempMOD 1

S1a 6 12 13 8 S1AMOD

S1b 13 12 13 8 S1BMOD

S2a 6 15 14 13 S2AMOD

S2b 13 15 14 13 S2BMOD

Vbat 22 19 DC 1

ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*52),3))}

.MODEL DbodyMOD D (IS=6.0E-11 N=1.14 RS=3.9e-3 TRS1=3.5e-3 TRS2=3.0e-6

+ CJO=1.1e-9 M=0.63 TT=6.2e-8 XTI=4.5)

.MODEL DbreakMOD D (RS=10 TRS1=5.0e-3 TRS2=-5.0e-6)

.MODEL DplcapMOD D (CJO=3.5e-10 IS=1.0e-30 N=10 M=0.65)

.MODEL MmedMOD NMOS (VTO=3.55 KP=3 IS=1e-40 N=10 TOX=1 L=1u W=1u RG=1.6)

.MODEL MstroMOD NMOS (VTO=4.0 KP=25 IS=1e-30 N=10 TOX=1 L=1u W=1u)

.MODEL MweakMOD NMOS (VTO=2.95 KP=0.05 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=16 RS=0.1)

.MODEL RbreakMOD RES (TC1=1.15e-3 TC2=-9.5e-7)

.MODEL RdrainMOD RES (TC1=9.0e-3 TC2=2.5e-5)

.MODEL RSLCMOD RES (TC1=3.0e-3 TC2=2.5e-6)

.MODEL RsourceMOD RES (TC1=4.0e-3 TC2=1.0e-6)

.MODEL RvthresMOD RES (TC1=-4.1e-3 TC2=-1.0e-5)

.MODEL RvtempMOD RES (TC1=-4.0e-3 TC2=1.0e-6)

.MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-3.5)

.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-3.5 VOFF=-5.0)

.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.5 VOFF=0.3)

.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.5)

.ENDS

Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global

Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank

Wheatley.

18

22

+

-

6

8

+

-

5

51

19

8

+

-

17

18

6

8

+

-

5

8

+

-

RBREAK

RVTEMP

VBAT

RVTHRES

IT

17

18

19

22

12

13

15

S1A

S1B

S2A

S2B

CA

CB

EGS

EDS

14

8

13

8

14

13

MWEAK

EBREAK

DBODY

RSOURCE

SOURCE

11

7

3

LSOURCE

RLSOURCE

CIN

RDRAIN

EVTHRES

16

21

8

MMED

MSTRO

DRAIN

2

LDRAIN

RLDRAIN

DBREAK

DPLCAP

ESLC

RSLC1

10

5

51

50

RSLC2

1

GATE

RGATE

EVTEMP

9

ESG

LGATE

RLGATE

20

+

-

+

-

+

-