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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPD5S116YFFR датащи(PDF) 8 Page - Texas Instruments |
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TPD5S116YFFR датащи(HTML) 8 Page - Texas Instruments |
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8 / 28 page  TPD5S116 SLVSBP3 – DECEMBER 2012 www.ti.com Voltage Level Shifter - SCL, SDA Lines –40°C to 85°C PARAMETER TEST CONDITIONS VCCA UNIT MIN TYP MAX VCCA+0.0 VOH_SYS IOH = –10 µA VI = VIH 0.8 × VCCA V 2 0.17 × VOL_SYS IOL = 10 µA VI = VIL V VCCA 0.8 x 5V_SYS+ VOH_CON IOH = –10 µA VI = VIH V 5V_SYS 0.02 VOL_CON IOH = 3 mA VI = VIL 0.3 0.4 V ΔVT Hysteresis at the SDx_IN 40 mV (VT+ - VT-) ΔVT Hysteresis at the SDx_OUT 400 mV (VT+ - VT-) Pull-up SCL_SYS, connected to 5 SDA_SYS VCCA rail RPU (Internal pull-up) k Ω Pull-up SCL_CON, connected to 5V 1.75 SDA_CON rail Pull-up IPULLUPAC Transient Boosted Pull- SCL_CON, connected to 5V 13 mA up Current (rise-time accelerator) SDA_CON rail SYS Port VCCA = 0V, VI or VO = 0 to 3.6 V 0 V ±5 Ioff CON Port 5V_CON=0V, VI or VO = 0 to 5.5 V 0 V ±5 µA IOZ SYS Port VI = VCCI or GND ±5 Voltage Level Shifter - CEC Line –40°C to 85°C PARAMETER TEST CONDITIONS VCCA UNIT MIN TYP MAX VCCA+0.0 VOH_SYS IOH = –10 µA VI = VIH 0.8 × VCCA V 2 0.17 × VOL_SYS IOL = 10 µA VI = VIL V VCCA VOH_CON IOH = –10 µA VI = VIH 0.8 x V3P3 V VOL_CON IOH = 3 mA VI = VIL 0.3 0.4 V ΔVT Hysteresis at the CEC_SYS 30 mV (VT+ - VT-) ΔVT Hysteresis at the CEC_CON 283 mV (VT+ - VT-) Pull-up CEC_SYS connected to 5 k Ω VCCA rail RPU (Internal pull-up) Pull-up CEC_CON connected to 22 26 30 k Ω 3.3V rail Pull-down RPD (Internal pull-down) CEC_CON connected 10 M Ω connector side SYS Port VCCA = 0V, VI or VO = 0 to 3.6 V 0 V ±5 Ioff CON Port 5V_CON=0V, VI or VO = 0 to 5.5 V 0 V ±1.8 µA IOZ SYS Port VI = VCCI or GND ±5 8 Submit Documentation Feedback Copyright © 2012, Texas Instruments Incorporated Product Folder Links: TPD5S116 |
Аналогичный номер детали - TPD5S116YFFR |
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Аналогичное описание - TPD5S116YFFR |
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