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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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TPS22986 датащи(PDF) 4 Page - Texas Instruments |
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TPS22986 датащи(HTML) 4 Page - Texas Instruments |
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4 / 22 page  TPS22986 SLVSBS5 – JANUARY 2013 www.ti.com ELECTRICAL CHARACTERISTICS Unless otherwise noted the specification applies over the VDD range and operating junction temp –40°C ≤ TJ ≤ 85°C. Typical values are for VDD = 3.3V and TJ = 25°C. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT POWER SUPPLIES AND CURRENTS VDD1/2 Input voltage range 2.8 19.8 V VDD1 > VDD2 250 500 IDD-1 VDD1 Quiescent current VDD1 = 2.8 to 15V µA VDD1 < VDD2 20 VDD2 > VDD1 250 500 IDD-2 VDD2 Quiescent current VDD2 = 2.8 to 15V µA VDD2 < VDD1 20 IIN-ENB ENB Input current VIN = 1.8V to 3.6V 1 µA IIN-UART RXH and TXC input current VIN = 1.8V to 3.6V 6 µA IIN-CFGOE CFG/OE Input current after mode selection VIN = 1.8V to 3.6V 3 µA IIN-RESETZ RESETZ Input current VRESETZ = 100 mV 0.8 2 3 mA SWITCH AND RESISTANCE CHARACTERISTICS RF1/2 FET1/2 On resistance VDD = 3.3V, IOUT = 10mA 1 3 Ω RF3/4 FET3/4 On resistance VDD = 3.3V, IOUT = 350mA 120 175 m Ω RPDRESETZ RESETZ Pull-down resistance RESETZ asserted 33 50 100 Ω RPUCFGOE (1) CFG/OE Pull-up resistance 15 20 25 k Ω RPDUART TXC and RXH See the UART RX and TX Section 0.6 1 1.75 M Ω Pull-down resistance RPDNORMAL Series CFG/OE Resistance to enter normal mode See Mode Selection Section 35 50 k Ω RPDCONTROL CFG/OE Resistance to GND to enter control mode See Mode Selection Section 10 12 k Ω VOLTAGE THESHOLDS AND AMPLITUDES High voltage lockout 3.3V Supply Rising 3.5 3.55 3.6 V VHVLO Hysteresis 20 40 60 mV 3.3V Supply Rising 2.7 2.75 2.8 VUVLO Under voltage lockout V 3.3V Supply Falling 2.4 2.45 2.5 VCPO Charge pump voltage CCPO = 2nF, ICPO = 0mA 8 9 11 V COUTB = 4µF, IOUTB = 0mA, VOS Voltage overshoot on OUTA/B COUTA = 1µF, IOUTA = 0mA, 200 mV VDD1 SR3.3→4V = 10mV/µs TRANSITION TIMING td UVLO To FETn open time COUTB = 4µF 200 µs te UVLO To FETn closed time COUTA = 1µF 2 ms tdh HVLO To FETn open time 20 µs See The Supply Switch-Over During teh HVLO To FETn closed time HVLO Section TRANSITION TIMING (NORMAL MODE) teb ENB To FET3/4 closed time COUTB = 4µF 2 ms tdb ENB To FET3/4 open time COUTA = 1µF 200 µs tE2R ENB to RESETZ time 6 ms (1) CFG/OE is pulled to the internal VDD (VDD1 or VDD2) through the resistance RPUCFGOE only during mode selection at power-up. 4 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: TPS22986 |
Аналогичный номер детали - TPS22986 |
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Аналогичное описание - TPS22986 |
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