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APT30M61BLL датащи(PDF) 1 Page - Advanced Power Technology |
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APT30M61BLL датащи(HTML) 1 Page - Advanced Power Technology |
1 / 2 page ADVANCE TECHNICAL INFORMATION Characteristic / Test Conditions Drain-Source Breakdown Voltage (V GS = 0V, I D = 250µA) On State Drain Current 2 (V DS > I D(on) x R DS(on) Max, V GS = 10V) Drain-Source On-State Resistance 2 (V GS = 10V, 0.5 I D[Cont.] ) Zero Gate Voltage Drain Current (V DS = V DSS , V GS = 0V) Zero Gate Voltage Drain Current (V DS = 0.8 V DSS , V GS = 0V, T C = 125°C) Gate-Source Leakage Current (V GS = ±30V, V DS = 0V) Gate Threshold Voltage (V DS = V GS , I D = 1mA) MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified. Symbol V DSS I D I DM V GS V GSM P D T J ,T STG T L I AR E AR E AS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 UNIT Volts Amps Volts Watts W/°C °C Amps mJ STATIC ELECTRICAL CHARACTERISTICS Symbol BV DSS I D(on) R DS(on) I DSS I GSS V GS(th) UNIT Volts Amps Ohms µA nA Volts MIN TYP MAX 300 54 0.061 100 500 ±100 35 APT30M61 300 54 216 ±30 ±40 400 3.20 -55 to 150 300 54 30 1300 G D S CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com TO-247 USA 405 S.W. Columbia Street Bend, Oregon 97702 -1035 Phone: (541) 382-8028 FAX: (541) 388-0364 EUROPE Chemin de Magret F-33700 Merignac - France Phone: (33) 5 57 92 15 15 FAX: (33) 5 56 47 97 61 D3PAK BLL SLL APT30M61BLL APT30M61SLL 300V 54A 0.061 W Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering R DS(ON) and Q g. Power MOS 7 TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure. POWER MOS 7TM • Lower Input Capacitance • Increased Power Dissipation • Lower Miller Capacitance • Easier To Drive • Lower Gate Charge, Qg • TO-247 or Surface Mount D3PAK Package |
Аналогичный номер детали - APT30M61BLL |
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Аналогичное описание - APT30M61BLL |
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