поискавой системы для электроныых деталей |
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BAW56 датащи(PDF) 2 Page - Diodes Incorporated |
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BAW56 датащи(HTML) 2 Page - Diodes Incorporated |
2 / 4 page BAW56 Document number: DS12008 Rev. 21 - 2 2 of 4 www.diodes.com July 2012 © Diodes Incorporated BAW56 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 5) IFM 300 mA Non-Repetitive Peak Forward Surge Current @ t = 1.0µs @ t = 1.0s IFSM 2.0 1.0 A Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) PD 350 mW Thermal Resistance Junction to Ambient Air (Note 5) RθJA 357 °C/W Operating and Storage Temperature Range TJ , TSTG -65 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V(BR)R 75 ⎯ V IR = 2.5µA Forward Voltage VF ⎯ 0.715 0.855 1.0 1.25 V IF = 1.0mA IF = 10mA IF = 50mA IF = 150mA Reverse Current (Note 6) IR ⎯ 2.5 50 30 25 µA µA µA nA VR = 75V VR = 75V, TJ = +150°C VR = 25V, TJ = +150°C VR = 20V Total Capacitance CT ⎯ 2.0 pF VR = 0, f = 1.0MHz Reverse Recovery Time trr ⎯ 4.0 ns IF = IR = 10mA, Irr = 0.1 x IR, RL = 100Ω Notes: 5. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com. 6. Short duration pulse test used to minimize self-heating effect. 400 T , AMBIENT TEMPERATURE, (°C) Fig. 1 Power Derating Curve, Total Package A 200 100 300 0 500 0 100 200 Note 5 0.1 1 0.01 0.001 01.5 1.0 0.5 V , INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics, Per Element F |
Аналогичный номер детали - BAW56_12 |
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Аналогичное описание - BAW56_12 |
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