поискавой системы для электроныых деталей |
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UFT800B датащи(PDF) 1 Page - Diotec Semiconductor |
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UFT800B датащи(HTML) 1 Page - Diotec Semiconductor |
1 / 2 page UFT800A ... UFT800J UFT800A ... UFT800J Superfast Efficient Rectifiers – Single Diode Superschnelle Hocheffizienz-Gleichrichter – Einzeldiode Version 2013-05-07 Dimensions - Maße [mm] Nominal current Nennstrom 8 A Repetitive peak reverse voltage Periodische Spitzensperrspannung 50...600 V Plastic case Kunststoffgehäuse TO-220AC Weight approx. Gewicht ca. 1.8 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging in tubes Standard Lieferform in Stangen Maximum ratings and Characteristics Grenz- und Kennwerte Type Typ Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] Surge peak reverse voltage Stoßspitzensperrspannung VRSM [V] Forward voltage Durchlass-Spannung VF [V] 1) IF = 5 A IF = 8 A UFT800A 50 50 < 0.9 < 1.0 UFT800B 100 100 < 0.9 < 1.0 UFT800C 150 150 < 0.9 < 1.0 UFT800D 200 200 < 0.9 < 1.0 UFT800F 300 300 < 1.15 < 1.25 UFT800G 400 400 < 1.15 < 1.25 UFT800H 500 500 < 1.6 < 1.75 UFT800J 600 600 < 1.6 < 1.75 Max. average forward rectified current, R-load Dauergrenzstrom in Einwegschaltung mit R-Last TC = 100°C IFAV 8 A Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 22 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stoßstrom für eine 50/60 Hz Sinus-Halbwelle TA = 25°C IFSM 112/125 A Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25°C i2t 62 A2s Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Tj TS -50...+150°C -50...+175°C 1 Tj = 25°C 2 Max. temperature of the case TC = 100°C – Max. Temperatur des Gehäuses TC = 100°C © Diotec Semiconductor AG http://www.diotec.com/ 1 4 3 1 Type Typ 5.08±0.1 0.8±0.2 1.3±0.1 10.1±0.3 Ø ±0.2 3.8 1.2±0.2 0.42±0.1 4.5±0.2 2.67±0.2 4 3 1 |
Аналогичный номер детали - UFT800B |
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Аналогичное описание - UFT800B |
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