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STU6N65K3 датащи(PDF) 4 Page - STMicroelectronics

номер детали STU6N65K3
подробное описание детали  N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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STU6N65K3 датащи(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF6N65K3, STFI6N65K3, STU6N65K3
4/16
Doc ID 18424 Rev 2
2
Electrical characteristics
(TC = 25 °C unless otherwise specified)
Table 4.
On /off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
breakdown voltage
ID = 1 mA, VGS = 0
650
V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 650 V
VDS = 650 V, TC=125 °C
0.8
50
µA
µA
IGSS
Gate-body leakage
current (VDS = 0)
VGS = ± 20 V
± 9
µA
VGS(th)
Gate threshold voltage VDS = VGS, ID = 50 µA
3
3.75
4.5
V
RDS(on
Static drain-source
on-resistance
VGS = 10 V, ID = 2.7 A
1.1
1.3
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
-
880
65
12
-
pF
pF
pF
Co(tr)
(1)
1.
Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
Eq. capacitance time
related
VGS = 0, VDS = 0 to 520 V
-43
-
pF
Co(er)
(2)
2.
Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
Eq. capacitance
energy related
-27
-
pF
RG
Intrinsic gate
resistance
f = 1 MHz open drain
-
3.5
-
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 500 V, ID = 5.4 A,
VGS = 10 V
(see Figure 18)
-
33
4
21
-
nC
nC
nC


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