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STU6N65K3 датащи(PDF) 4 Page - STMicroelectronics |
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STU6N65K3 датащи(HTML) 4 Page - STMicroelectronics |
4 / 16 page Electrical characteristics STF6N65K3, STFI6N65K3, STU6N65K3 4/16 Doc ID 18424 Rev 2 2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 4. On /off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS = 0 650 V IDSS Zero gate voltage drain current (VGS = 0) VDS = 650 V VDS = 650 V, TC=125 °C 0.8 50 µA µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20 V ± 9 µA VGS(th) Gate threshold voltage VDS = VGS, ID = 50 µA 3 3.75 4.5 V RDS(on Static drain-source on-resistance VGS = 10 V, ID = 2.7 A 1.1 1.3 Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 - 880 65 12 - pF pF pF Co(tr) (1) 1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Eq. capacitance time related VGS = 0, VDS = 0 to 520 V -43 - pF Co(er) (2) 2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS Eq. capacitance energy related -27 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 3.5 - Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 500 V, ID = 5.4 A, VGS = 10 V (see Figure 18) - 33 4 21 - nC nC nC |
Аналогичный номер детали - STU6N65K3 |
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Аналогичное описание - STU6N65K3 |
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