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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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BC549 датащи(PDF) 1 Page - Fairchild Semiconductor |
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BC549 датащи(HTML) 1 Page - Fairchild Semiconductor |
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1 / 4 page  ©2002 Fairchild Semiconductor Corporation Rev. A2, August 2002 NPN Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage : BC546 : BC547/550 : BC548/549 80 50 30 V V V VCEO Collector-Emitter Voltage : BC546 : BC547/550 : BC548/549 65 45 30 V V V VEBO Emitter-Base Voltage : BC546/547 : BC548/549/550 6 5 V V IC Collector Current (DC) 100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA hFE DC Current Gain VCE=5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 90 200 250 600 mV mV VBE (sat) Base-Emitter Saturation Voltage IC=10mA, IB=0.5mA IC=100mA, IB=5mA 700 900 mV mV VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA VCE=5V, IC=10mA 580 660 700 720 mV mV fT Current Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF Cib Input Capacitance VEB=0.5V, IC=0, f=1MHz 9 pF NF Noise Figure : BC546/547/548 : BC549/550 : BC549 : BC550 VCE=5V, IC=200µA f=1KHz, RG=2KΩ VCE=5V, IC=200µA RG=2KΩ, f=30~15000MHz 2 1.2 1.4 1.4 10 4 4 3 dB dB dB dB Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 BC546/547/548/549/550 Switching and Applications • High Voltage: BC546, VCEO=65V • Low Noise: BC549, BC550 • Complement to BC556 ... BC560 1. Collector 2. Base 3. Emitter TO-92 1 |
Аналогичный номер детали - BC549 |
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Аналогичное описание - BC549 |
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