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CD4001BCN датащи(PDF) 3 Page - Fairchild Semiconductor

номер детали CD4001BCN
подробное описание детали  Quad 2-Input NOR Buffered B Series Gate . Quad 2-Input NAND Buffered B Series Gate
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

CD4001BCN датащи(HTML) 3 Page - Fairchild Semiconductor

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Absolute Maximum Ratings(Note 1)
(Note 2)
Recommended Operating
Conditions
Note 1: “Absolute Maximum Ratings” are those values beyond which the
safety of the device cannot be guaranteed. Except for “Operating Tempera-
ture Range” they are not meant to imply that the devices should be oper-
ated at these limits. The Electrical Characteristics tables provide conditions
for actual device operation.
Note 2: All voltages measured with respect to VSS unless otherwise speci-
fied.
DC Electrical Characteristics (Note 2)
Note 3: IOL and IOH are tested one output at a time.
AC Electrical Characteristics (Note 4)
CD4001BC: TA = 25°C, Input tr; tf = 20 ns. CL = 50 pF, RL = 200k. Typical temperature coefficient is 0.3%/°C.
Note 4: AC Parameters are guaranteed by DC correlated testing.
Voltage at any Pin
−0.5V to V
DD +0.5V
Power Dissipation (PD)
Dual-In-Line
700 mW
Small Outline
500 mW
VDD Range
−0.5 V
DC to +18 VDC
Storage Temperature (TS)
−65°C to +150°C
Lead Temperature (TL)
(Soldering, 10 seconds)
260
°C
Operating Range (VDD)3 VDC to 15 VDC
Operating Temperature Range
CD4001BC, CD4011BC
−55°C to +125°C
Symbol
Parameter
Conditions
−55°C
+25°C
+125°C
Units
Min
Max
Min
Typ
Max
Min
Max
IDD
Quiescent Device
VDD = 5V, VIN = VDD or VSS
0.25
0.004
0.25
7.5
µA
Current
VDD = 10V, VIN = VDD or VSS
0.5
0.005
0.50
15
VDD = 15V, VIN = VDD or VSS
1.0
0.006
1.0
30
VOL
LOW Level
VDD = 5V
0.05
0
0.05
0.05
V
Output Voltage
VDD = 10V
|IO| < 1 µA
0.05
0
0.05
0.05
VDD = 15V
0.05
0
0.05
0.05
VOH
HIGH Level
VDD = 5V
4.95
4.95
5
4.95
V
Output Voltage
VDD = 10V
|IO| < 1 µA
9.95
9.95
10
9.95
VDD = 15V
14.95
14.95
15
14.95
VIL
LOW Level
VDD = 5V, VO = 4.5V
1.5
2
1.5
1.5
V
Input Voltage
VDD = 10V, VO = 9.0V
3.0
4
3.0
3.0
VDD = 15V, VO = 13.5V
4.0
6
4.0
4.0
VIH
HIGH Level
VDD = 5V, VO = 0.5V
3.5
3.5
3
3.5
V
Input Voltage
VDD = 10V, VO = 1.0V
7.0
7.0
6
7.0
VDD = 15V, VO = 1.5V
11.0
11.0
9
11.0
IOL
LOW Level Output
VDD = 5V, VO = 0.4V
0.64
0.51
0.88
0.36
mA
Current
VDD = 10V, VO = 0.5V
1.6
1.3
2.25
0.9
(Note 3)
VDD = 15V, VO = 1.5V
4.2
3.4
8.8
2.4
IOH
HIGH Level Output
VDD = 5V, VO = 4.6V
−0.64
−0.51
−0.88
−0.36
mA
Current
VDD = 10V, VO = 9.5V
−1.6
−1.3
−2.25
−0.9
(Note 3)
VDD = 15V, VO = 13.5V
−4.2
−3.4
−8.8
−2.4
IIN
Input Current
VDD = 15V, VIN = 0V
−0.10
−10−5
−0.10
−1.0
µA
VDD = 15V, VIN = 15V
0.1
10−5
0.10
1.0
Symbol
Parameter
Conditions
Typ
Max
Units
tPHL
Propagation Delay Time,
VDD = 5V
120
250
ns
HIGH-to-LOW Level
VDD = 10V
50
100
VDD = 15V
35
70
tPLH
Propagation Delay Time,
VDD = 5V
110
250
ns
LOW-to-HIGH Level
VDD = 10V
50
100
VDD = 15V
35
70
tTHL, tTLH
Transition Time
VDD = 5V
90
200
ns
VDD = 10V
50
100
VDD = 15V
40
80
CIN
Average Input Capacitance
Any Input
5
7.5
pF
CPD
Power Dissipation Capacity
Any Gate
14
pF


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