TC58NVG2S3ETA00 datasheet(4/70 Pages) TOSHIBA

номер детали	TC58NVG2S3ETA00

подробное описание детали	4 GBIT (512M x 8 BIT) CMOS NAND E2PROM

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TC58NVG2S3ETA00

2012-09-01

4

VALID BLOCKS

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

NVB

Number of Valid Blocks

4016

⎯

4096

Blocks

NOTE:

The device occasionally contains unusable blocks. Refer to Application Note (13) toward the end of this document.

The first block (Block 0) is guaranteed to be a valid block at the time of shipment.

The specification for the minimum number of valid blocks is applicable over lifetime

The number of valid blocks is on the basis of single plane operations, and this may be decreased with two plane

operations.

RECOMMENDED DC OPERATING CONDITIONS

SYMBOL

PARAMETER

MIN

TYP.

MAX

UNIT

VCC

Power Supply Voltage

2.7

⎯

3.6

V

VIH

High Level input Voltage

2.7 V

≤ VCC ≤ 3.6 V

Vcc x 0.8

⎯

VCC + 0.3

V

VIL

Low Level Input Voltage

2.7 V

≤ VCC ≤ 3.6 V

−0.3*

⎯

Vcc x 0.2

V

*

−2 V (pulse width lower than 20 ns)

DC CHARACTERISTICS (Ta = 0 to 70℃, VCC = 2.7 to 3.6V)

SYMBOL

PARAMETER

CONDITION

MIN

TYP.

MAX

UNIT

IIL

Input Leakage Current

VIN = 0 V to VCC

⎯

±10

µA

ILO

Output Leakage Current

VOUT = 0 V to VCC

⎯

±10

µA

ICCO1

Serial Read Current

CE

= VIL, IOUT = 0 mA, tcycle = 25 ns

⎯

30

mA

ICCO2

Programming Current

⎯

30

mA

ICCO3

Erasing Current

⎯

30

mA

ICCS

Standby Current

CE

= VCC − 0.2 V, WP = 0 V/VCC

⎯

50

µA

VOH

High Level Output Voltage

IOH = −0.1 mA

Vcc – 0.2

⎯

V

VOL

Low Level Output Voltage

IOL = 0.1 mA

⎯

0.2

V

IOL

(

BY

/

RY

)

Output current of

BY

/

RY

VOL = 0.2 V

⎯

4

⎯

mA

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Toshiba Semiconductor	TC58NVG2S3ETA00	67Kb / 3P	NAND Flash Memory(SLC Middle Capacity)

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Аналогичное описание - TC58NVG2S3ETA00

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TC58NVG2S3ETA00 датащи(PDF) 4 Page - Toshiba Semiconductor

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Аналогичный номер детали - TC58NVG2S3ETA00

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