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AM2314NE датащи(PDF) 1 Page - Analog Power |
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AM2314NE датащи(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM2314NE N-Channel 20-V (D-S) MOSFET VDS (V) ID(A) 5.3 4.5 Symbol Limit Units VDS 20 VGS ±12 TA=25°C 5.3 TA=70°C 4.1 IDM 20 IS 1.8 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Continuous Drain Current a PRODUCT SUMMARY 20 rDS(on) (mΩ) 32 @ VGS = 4.5V 44 @ VGS = 2.5V Gate-Source Voltage Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits © Preliminary 1 Publication Order Number: DS_AM2314NE_1A |
Аналогичный номер детали - AM2314NE |
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Аналогичное описание - AM2314NE |
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