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AM3412N датащи(PDF) 1 Page - Analog Power |
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AM3412N датащи(HTML) 1 Page - Analog Power |
1 / 5 page Analog Power AM3412N N-Channel 30-V (D-S) MOSFET VDS (V) ID(A) 6.3 5.5 Symbol Limit Units VDS 30 VGS ±20 TA=25°C 6.3 TA=70°C 5.2 IDM 30 IS 4.0 A TA=25°C 1.3 TA=70°C 0.8 TJ, Tstg -55 to 150 °C Symbol Maximum Units 100 166 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature RθJA ID A PD W Maximum Junction-to-Ambient a Continuous Drain Current a Power Dissipation a t <= 10 sec Steady State Gate-Source Voltage PRODUCT SUMMARY 30 rDS(on) (mΩ) 27 @ VGS = 10V 35 @ VGS = 4.5V Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Systems • Industrial DC/DC Conversion Circuits c Preliminary 1 Publication Order Number: DS_AM3412N_1A |
Аналогичный номер детали - AM3412N |
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Аналогичное описание - AM3412N |
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