AM3932NE datasheet(2/5 Pages) ANALOGPOWER

номер детали	AM3932NE

подробное описание детали	N-Channel 30-V (D-S) MOSFET

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производитель	ANALOGPOWER [Analog Power]

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AM3932NE

Analog Power

PRELIMINARY

Publication Order Number:

DS-AM3932NE_A

Notes

a.

Pulse test: PW <= 300us duty cycle <= 2%.

b.

Guaranteed by design, not subject to production testing.

Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation

or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or

use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental

damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and

actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by

customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,

intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or

sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.

Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its

officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney

fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.

Min

Typ

Max

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 uA

0.7

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = 4 V

±100

nA

VDS = 24 V, VGS = 0 V

1

VDS = 24 V, VGS = 0 V, TJ = 55

oC

25

On-State Drain Current

A

ID(on)

VDS = 5 V, VGS = 4.5 V

6

A

VGS = 4.5 V, ID = 3.5 A

63

VGS = 2.5 V, ID = 3.3 A

82

Forward Tranconductance

A

gfs

VDS = 15 V, ID = 3.5 A

6.9

S

Diode Forward Voltage

VSD

IS = 2.3 A, VGS = 0 V

0.8

V

Total Gate Charge

Qg

6.3

Gate-Source Charge

Qgs

0.9

Gate-Drain Charge

Qgd

1.9

Turn-On Delay Time

td(on)

16

Rise Time

tr

5

Turn-Off Delay Time

td(off)

23

Fall-Time

tf

3

VDD = 25 V, RL = 25 Ω , ID = 1 A,

VGEN = 10 V

nS

VDS = 15 V, VGS = 4.5 V,

ID = 3.5 A

nC

Drain-Source On-Resistance

A

rDS(on)

mΩ

Dynamic

b

Static

Zero Gate Voltage Drain Current

IDSS

uA

SPECIFICATIONS (TA = 25

oC UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Limits

Unit

Аналогичный номер детали - AM3932NE

производитель	номер детали	датащи	подробное описание детали
Analog Power	AM3932N	242Kb / 5P	N-Channel 30-V (D-S) MOSFET

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Аналогичное описание - AM3932NE

производитель	номер детали	датащи	подробное описание детали
Vishay Siliconix	SI3456DV	61Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. B, 23-Nov-98
	SUU50N03-12P	60Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. A, 15-Sep-03
	SI4894DY	129Kb / 3P	N-Channel 30-V (D-S) MOSFET 17-May-04
	SI4406DY	38Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. C, 26-May-03
	SI7380DP	180Kb / 3P	N-Channel 30-V (D-S) MOSFET 24-May-04
	SI733ADP	61Kb / 5P	N-Channel 30-V (D-S) MOSFET Rev. A, 25-Oct-04
	SI4892DY	71Kb / 4P	N-Channel 30-V (D-S) MOSFET Rev. F, 01-Aug-05
Vaishali Semiconductor	SI4356ADY	143Kb / 3P	N-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SIRA00DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA04DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 13-Feb-12
	SIRA14DP	513Kb / 13P	N-Channel 30 V (D-S) MOSFET Rev. A, 12-Mar-12

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