поискавой системы для электроныых деталей |
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FAN5070 датащи(PDF) 7 Page - Fairchild Semiconductor |
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FAN5070 датащи(HTML) 7 Page - Fairchild Semiconductor |
7 / 14 page FAN5070 7 REV. 1.0.1 8/7/01 Table 3. FAN5070 Application Bill of Materials for Intel VRM8.5 Motherboards (Components based on Worst Case Analysis—See Appendix for Details) Notes: 1. Inductor L1 is recommended to isolate the 5V input supply from noise generated by the MOSFET switching, and to comply with Intel dI/dt requirements. L1 may be omitted if desired. 2. For 30A designs using the TO-220 MOSFETs, heatsinks with thermal resistance Θ SA < 20°C/W should be used. For designs using the TO-263 MOSFETs, adequate copper area should be used. For details and a spreadsheet on MOSFET selections, refer to Applications Bulletins AB-8 and AB-15. Reference Manufacturer Part # Quantity Description Requirements/Comments C1 AVX TAJB475M010R5 1 4.7µF, 10V Capacitor C2, C5 Panasonic ECU-V1C105ZFX 2 1µF, 16V Capacitor C3-4,C6 Panasonic ECU-V1H104ZFX 3 100nF, 50V Capacitor CIN Rubycon 16ZL1000M 4 1000µF, 16V Electrolytic IRMS = 2.3A COUT Rubycon 6.3ZL1500M 8 1500µF, 6.3V Electrolytic ESR ≤ 23mΩ D1 Motorola MBRD835L 1 8A Schottky Diode L1 Any Optional 1.3µH, 10A Inductor DCR ~ 6m Ω See Note 1. L2 Coiltronics HC2-1R0 1 1.0µH, 34A Inductor DCR ~ 1m Ω Q1 Fairchild FDD6690A 2 N-Channel MOSFET RDS(ON) = 17mΩ @ VGS = 4.5V See Note 2. Q2 Fairchild FDD6680A 2 N-Channel MOSFET RDS(ON) = 9.5mΩ @ VGS = 4.5V See Note 2. R1 Any 1 8.66K Ω R2 Any 1 27.4K Ω R3-4 Any 2 4.7 Ω R5, R8-12 Any 6 10K Ω R6-7 Any 2 10 Ω U1 Fairchild FAN5070M 1 DC/DC Controller Test Parameters Figure 2. Output Drive Timing Diagram tR 90% tDT tDT tF HIDRV LODRV 2V 2V 2V 90% 10% 10% 2V |
Аналогичный номер детали - FAN5070 |
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Аналогичное описание - FAN5070 |
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