FDD5690,Rev.B

FDD5690

June 1999

PRELIMINARY

1999 Fairchild Semiconductor Corporation

G

S

D

TO-252

S

D

G

Features

R

low R

General Description

This N-Channel MOSFET has been designed specifically

to improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers.

These MOSFETs feature faster switching and lower gate

charge than other MOSFETs with comparable R

DS(ON)

specifications.

The result is a MOSFET that is easy and safer to drive

(even at very high frequencies), and DC/DC power supply

designs with higher overall efficiency.

Absolute Maximum Ratings

Symbol

Parameter

Ratings

Units

Drain-Source Voltage

60

V

Gate-Source Voltage

±20

V

Maximum Drain Current

-Continuous

(Note 1)

30

(Note 1a)

9

Maximum Drain Current

-Pulsed

100

A

(Note 1)

50

(Note 1a)

3.2

(Note 1b)

1.3

W

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

R

Thermal Resistance, Junction-to- Case

(Note 1)

2.5

°C/W

R

Thermal Resistance, Junction-to- Ambient

(Note 1a)

40

°C/W

(Note 1b)

96

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

FDD5690

FDD5690

13’’

16mm

2500