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FDN306P датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDN306P
подробное описание детали  P-Channel 1.8V Specified PowerTrench MOSFET
Download  5 Pages
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDN306P датащи(HTML) 2 Page - Fairchild Semiconductor

  FDN306P Datasheet HTML 1Page - Fairchild Semiconductor FDN306P Datasheet HTML 2Page - Fairchild Semiconductor FDN306P Datasheet HTML 3Page - Fairchild Semiconductor FDN306P Datasheet HTML 4Page - Fairchild Semiconductor FDN306P Datasheet HTML 5Page - Fairchild Semiconductor  
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FDN306P Rev D W)
Electrical Characteristics
T
A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage VGS = 0 V,
ID = –250
µA
–12
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = –250
µA,Referenced to 25°C
–3
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = –10 V,
VGS = 0 V
–1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = –250
µA
–0.4
–0.6
–1.5
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = –250
µA,Referenced to 25°C
2.5
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = –4.5 V,
ID = –2.6 A
VGS = –2.5 V,
ID = –2.3 A
VGS = –1.8V,
ID = –1.8 A
VGS = –4.5 V, ID = –2.6A , TJ=125
°C
30
39
54
40
40
50
80
54
m
ID(on)
On–State Drain Current
VGS = –4.5 V,
VDS = –5 V
–10
A
gFS
Forward Transconductance
VDS = –5 V,
ID = –2.6 A
10
S
Dynamic Characteristics
Ciss
Input Capacitance
1138
pF
Coss
Output Capacitance
454
pF
Crss
Reverse Transfer Capacitance
VDS = –6 V,
V GS = 0 V,
f = 1.0 MHz
302
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
11
20
ns
tr
Turn–On Rise Time
10
20
ns
td(off)
Turn–Off Delay Time
38
61
ns
tf
Turn–Off Fall Time
VDD = –6 V,
ID = –1 A,
VGS = –4.5 V,
RGEN = 6
35
56
ns
Qg
Total Gate Charge
12
17
nC
Qgs
Gate–Source Charge
2
nC
Qgd
Gate–Drain Charge
VDS = –6 V,
ID = –2.6 A,
VGS = –4.5 V
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
–0.42
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = –0.42 (Note 2)
–0.6
–1.2
V
Notes:
1.
R
θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250
°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤ 300 µs, Duty Cycle ≤ 2.0%


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