поискавой системы для электроныых деталей |
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FDN339AN датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDN339AN датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDN339AN Rev. C Typical Characteristics (continued) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (sec) R (t) = r(t) * R R = 270 °C/W Duty Cycle, D = t /t 1 2 θJA θJA θJA T - T = P * R (t) θJA A J P(pk) t1 t 2 1 Single Pulse D = 0.5 0.1 0.05 0.02 0.01 0.2 0 200 400 600 800 1000 04 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0 4 8 12 16 20 0.0001 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA=270 o C/W TA=25 o C 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) VGS = 4.5V SINGLE PULSE RθJA = 270 oC/W TA = 25 oC DC 10s 100ms 10ms 1ms 1s RDS(ON) LIMIT 0 1 2 3 4 5 0246 8 10 Qg, GATE CHARGE (nC) ID = 3A VDS = 5V 10V 15V |
Аналогичный номер детали - FDN339AN |
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Аналогичное описание - FDN339AN |
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