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FDS2170N3 датащи(PDF) 5 Page - Fairchild Semiconductor |
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FDS2170N3 датащи(HTML) 5 Page - Fairchild Semiconductor |
5 / 6 page FDS2170N3 Rev B1(W) Typical Characteristics 0 2 4 6 8 10 12 14 0 5 10 15 20 25 30 35 40 Qg, GATE CHARGE (nC) ID = 3.0A VDS = 50V 150V 100V 0 300 600 900 1200 1500 1800 0 40 80 120 160 200 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 100ms RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 85 oC/W TA = 25 oC 10ms 1ms 100µs 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 t1, TIME (sec) SINGLE PULSE RθJA = 85°C/W TA = 25°C Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) RθJA(t) = r(t) * RθJA RθJA = 85 °C/W TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 P(pk) t1 t2 SINGLE PULSE 0.01 0.02 0.05 0.1 0.2 D = 0.5 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. |
Аналогичный номер детали - FDS2170N3 |
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Аналогичное описание - FDS2170N3 |
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