поискавой системы для электроныых деталей |
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FDS3570 датащи(PDF) 4 Page - Fairchild Semiconductor |
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FDS3570 датащи(HTML) 4 Page - Fairchild Semiconductor |
4 / 8 page FDS3570Rev.B Typical Characteristics (continued) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 0 2 4 6 8 10 0 10 20304050 60 Qg, GATE CHARGE (nC) ID = 9A VDS = 10V 40V 20V 0 500 1000 1500 2000 2500 3000 3500 4000 0 102030405060 VDS, DRAIN TO SOURCE VOLTAGE (V) CISS CRSS COSS f = 1MHz VGS = 0 V 0.01 0.1 1 10 100 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) DC 10s 1s 100ms 10ms 1ms 100 µs RDS(ON) LIMIT VGS = 10V SINGLE PULSE RθJA = 125 oC/W TA = 25 oC 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) SINGLE PULSE RθJA = 125 o C/W TA = 25 o C 0.0001 0.001 0.01 0.1 1 10 100 300 0.001 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1 t , TIME (s e c ) 1 S i n g le P u l s e D = 0.5 0.1 0.05 0.02 0.01 0.2 D u t y C y c l e, D = t /t 1 2 R (t) = r(t) * R R = 125°C/W θJA θJA θJA T - T = P * R (t) θJA A J P(p k ) t1 t 2 |
Аналогичный номер детали - FDS3570 |
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Аналогичное описание - FDS3570 |
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