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FDS3580 датащи(PDF) 1 Page - Fairchild Semiconductor |
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FDS3580 датащи(HTML) 1 Page - Fairchild Semiconductor |
1 / 8 page FDS3580 Rev. B FDS3580 80V N-Channel PowerTrenchTM MOSFET April 1999 PRELIMINARY ©1999 Fairchild Semiconductor Corporation Absolute Maximum Ratings T A = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 80 V VGSS Gate-Source Voltage ±20 V ID Drain Current - Continuous (Note 1a) 7.6 A - Pulsed 50 PD Power Dissipation for Single Operation (Note 1a) 2.5 W (Note 1b) 1.2 (Note 1c) 1 TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS3580 FDS3580 13’’ 12mm 2500 units 6 7 8 5 3 2 1 4 S D S S SO-8 D D D G General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable R DS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features • 7.6 A, 80 V. R DS(ON ) = 0.027 Ω @ V GS = 10 V R DS(ON) = 0.031 Ω @ VGS = 6 V. • Low gate charge (34nC typical). • Fast switching speed. • High performance trench technology for extremely low R DS(ON). • High power and current handling capability. |
Аналогичный номер детали - FDS3580 |
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Аналогичное описание - FDS3580 |
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