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FDS3612 датащи(PDF) 2 Page - Fairchild Semiconductor

номер детали FDS3612
подробное описание детали  100V N-Channel PowerTrench MOSFET
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производитель  FAIRCHILD [Fairchild Semiconductor]
домашняя страница  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

FDS3612 датащи(HTML) 2 Page - Fairchild Semiconductor

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FDS3612 Rev B1(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse, VDD = 50 V, ID= 3.4 A
90
mJ
IAR
Drain-Source Avalanche Current
3.4
A
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
ID = 250
µA
100
V
∆BVDSS
∆T
J
Breakdown Voltage Temperature
Coefficient
ID = 250
µA, Referenced to 25°C
106
mV/
°C
IDSS
Zero Gate Voltage Drain Current
VDS = 80 V,
VGS = 0 V
10
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
On Characteristics
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS,
ID = 250
µA
2
2.5
4
V
∆VGS(th)
∆T
J
Gate Threshold Voltage
Temperature Coefficient
ID = 250
µA, Referenced to 25°C
–6
mV/
°C
RDS(on)
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 3.4 A
VGS = 6 V,
ID = 3.2 A
VGS = 10 V, ID = 3.4A, TJ = 125
°C
88
94
170
120
130
245
m
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 10 V
10
A
gFS
Forward Transconductance
VDS = 10 V,
ID = 3.4 A
11
S
Dynamic Characteristics
Ciss
Input Capacitance
632
pF
Coss
Output Capacitance
40
pF
Crss
Reverse Transfer Capacitance
VDS = 50 V,
V GS = 0 V,
f = 1.0 MHz
20
pF
Switching Characteristics (Note 2)
td(on)
Turn–On Delay Time
8.5
17
ns
tr
Turn–On Rise Time
2
4
ns
td(off)
Turn–Off Delay Time
23
37
ns
tf
Turn–Off Fall Time
VDD = 50 V,
ID = 1 A,
VGS = 10 V,
RGEN = 6
4.5
9
ns
Qg
Total Gate Charge
14
20
nC
Qgs
Gate–Source Charge
2.4
nC
Qgd
Gate–Drain Charge
VDS = 50 V,
ID = 3.4 A,
VGS = 10 V
3.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
2.1
A
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.1 A (Note 2)
0.75
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in
2 pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in
2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
µs, Duty Cycle < 2.0%


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