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FDS3670 датащи(PDF) 3 Page - Fairchild Semiconductor |
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FDS3670 датащи(HTML) 3 Page - Fairchild Semiconductor |
3 / 8 page FDS3670 Rev B1 (W) Typical Characteristics 0 10 20 30 40 50 60 01 23 45 VDS, DRAIN-SOURCE VOLTAGE (V) 5.0V 4.5V 4.0V 3.5V VGS = 10V 5.5V 0.8 1 1.2 1.4 1.6 1.8 2 0 10 20304050 60 I D, DIRAIN CURRENT (A) VGS = 4.0V 5.0V 5.5V 7.0V 10V 4.5V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( oC) ID = 7.2A V GS = 10V 0 0.01 0.02 0.03 0.04 0.05 0.06 3 456 78 9 10 VGS, GATE TO SOURCE VOLTAGE (V) I D = 3.6A T A = 125 oC TA = 25 oC Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 0 10 20 30 40 50 60 2 3456 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55 oC 25 oC 125 oC VDS = 5V 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125 oC 25 oC -55 oC VGS = 0V Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. |
Аналогичный номер детали - FDS3670 |
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Аналогичное описание - FDS3670 |
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